AGH University of Science and Technology, Faculty of Computer Science, Electronics and Telecommunications, Department of Electronics, 30-059 Krakow, Poland.
Sensors (Basel). 2018 Nov 28;18(12):4177. doi: 10.3390/s18124177.
Vanadium pentoxide thin films were deposited onto insulating support by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. X-ray diffraction at glancing incidence (GIXD) and Scanning Electronic Microscopy (SEM) were used for structural and phase characterization. Thickness of the films was determined by the profilometry. It has been confirmed by GIXD that the deposited films are composed of V₂O₅ phase. The gas sensing properties of V₂O₅ thin films were investigated at temperatures from range 410⁻617 K upon NO₂ gas of 4⁻20 ppm. The investigated material exhibited good response and reversibility towards nitrogen dioxide. The effect of metal-insulator transition (MIT) on sensor performance has been observed and discussed for the first time. It was found that a considerable increase of the sensor sensitivity occured above 545 K, which is related to postulated metal-insulator transition.
五氧化二钒薄膜通过射频反应溅射法，用金属钒靶材沉积在绝缘衬底上。通过流速控制的不同成分的氩-氧混合气体进行溅射。采用掠入射 X 射线衍射（GIXD）和扫描电子显微镜（SEM）对结构和相进行了表征。通过轮廓仪确定了薄膜的厚度。GIXD 证实，沉积的薄膜由 V₂O₅相组成。在 410⁻617 K 的温度范围内，对浓度为 4⁻20 ppm 的 NO₂气体进行了 V₂O₅薄膜的气敏特性研究。所研究的材料对二氧化氮表现出良好的响应和可逆性。首次观察到并讨论了金属-绝缘体转变（MIT）对传感器性能的影响。结果发现，在 545 K 以上时，传感器灵敏度有较大提高，这与假定的金属-绝缘体转变有关。
