Li Qiang, Tan Xingyi, Yang Yongming, Xiong Xiaoyong, Zhang Teng, Weng Zhulin
College of Intelligent Systems Science and Engineering, Hubei Minzu University, Enshi 445000, China.
Department of Physics, Chongqing Three Gorges University, Chongqing 404100, China.
Molecules. 2023 Jul 13;28(14):5390. doi: 10.3390/molecules28145390.
Two-dimensional (2D) semiconductors are being considered as alternative channel materials as silicon-based field-effect transistors (FETs) have reached their scaling limits. Recently, air-stable 2D selenium nanosheet FETs with a gate length of 5 µm were experimentally produced. In this study, we used an ab initio quantum transport approach to simulate sub-5 nm gate-length double-gate monolayer (ML) selenene FETs. When considering negative-capacitance technology and underlap, we found that 3 nm gate-length p-type ML selenene FETs can meet the 2013 ITRS standards for high-performance applications along the armchair and zigzag directions in the 2028 horizon. Therefore, ML selenene has the potential to be a channel material that can scale Moore's law down to a gate length of 3 nm.
由于基于硅的场效应晶体管（FET）已达到其缩放极限，二维（2D）半导体正被视为替代沟道材料。最近，实验制备出了栅长为5 µm的空气稳定型2D硒纳米片FET。在本研究中，我们使用从头算量子输运方法来模拟栅长小于5 nm的双栅单层（ML）硒化亚铜FET。考虑到负电容技术和非重叠时，我们发现栅长为3 nm的p型ML硒化亚铜FET在2028年的技术展望中，沿扶手椅方向和锯齿方向可满足2013年ITRS高性能应用标准。因此，ML硒化亚铜有潜力成为一种能将摩尔定律缩小至3 nm栅长的沟道材料。
