Martyniuk Piotr, Wang Peng, Rogalski Antoni, Gu Yue, Jiang Ruiqi, Wang Fang, Hu Weida
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Street, 00-908, Warsaw, Poland.
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China.
Light Sci Appl. 2023 Aug 31;12(1):212. doi: 10.1038/s41377-023-01259-3.
Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one-optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of AB, AB, and potential alternatives to formerly mentioned-"third wave" superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device's performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in AB APDs, such as AlInAsSb, which may be used in future optical communications, type-II superlattice (T2SLs, "Ga-based" and "Ga-free"), and 2D materials-based IR APDs. The latter-atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed AB APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs' performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs' active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~10 for MWIR [wavelength, λ = 4 μm, temperature, T = 10-180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance-sensitivity and low excess noise.
近年来，雪崩光电二极管（APD）引起了极大的关注，并因其时间响应和高灵敏度而被广泛应用于包括最重要的光通信系统在内的一系列领域。本文展示了AB、AB以及前文提到的“第三波”超晶格（SL）和二维（2D）材料红外（IR）APD的演变和最新发展。首先，阐述了APD的基本工作原理以及结构方面的进展。结果表明，APD的发展使器件性能朝着更高带宽、更低噪声和更高增益带宽积的方向发展。还考虑了在不同波长范围内工作的器件实现高增益和低过量噪声所需的材料特性，展示了未来的进展和研究方向。更多关注集中在AB APD的进展上，例如可用于未来光通信的AlInAsSb、II型超晶格（T2SLs，“基于Ga”和“无Ga”）以及基于2D材料的红外APD。后者——原子级薄的2D材料在APD中展现出巨大潜力，可被视为替代知名、复杂且成熟的AB APD技术的材料，包括单光子探测模式。这与传统体材料APD的性能受到相当高的暗电流限制这一事实有关。解决该问题的一种方法似乎是采用低维材料和结构作为APD的有源区。肖特基势垒和原子级厚度导致2D APD的暗电流得到显著抑制。此外，APD可在可见光（VIS）、近红外（NIR）/中波长红外范围（MWIR）内工作，对于MWIR [波长，λ = 为4μm，温度，T = 10 - 180K，黑磷（BP）/硒化铟APD]，响应度约为80 A/W，外量子效率约为24.8%，增益约为10。人们认为，2D APD可能会证明自己是一种替代方案，为器件制造提供一种可行的方法，同时具备高性能灵敏度和低过量噪声。
