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利用绝缘体上硅场效应晶体管生物传感器检测抗体-抗原复合物的局限性研究。

Investigation of Limitations in the Detection of Antibody + Antigen Complexes Using the Silicon-on-Insulator Field-Effect Transistor Biosensor.

机构信息

Federal State Research Institution State Research Center of Virology and Biotechnology "Vector", 630559 Koltsovo, Russia.

Faculty of Automation and Computer Engineering, Novosibirsk State Technical University, 630073 Novosibirsk, Russia.

出版信息

Sensors (Basel). 2023 Aug 29;23(17):7490. doi: 10.3390/s23177490.

DOI:10.3390/s23177490
PMID:37687945
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10490761/
Abstract

The SOI-FET biosensor (silicon-on-insulator field-effect transistor) for virus detection is a promising device in the fields of medicine, virology, biotechnology, and the environment. However, the applications of modern biosensors face numerous problems and require improvement. Some of these problems can be attributed to sensor design, while others can be attributed to technological limitations. The aim of this work is to conduct a theoretical investigation of the "antibody + antigen" complex (AB + AG) detection processes of a SOI-FET biosensor, which may also solve some of the aforementioned problems. Our investigation concentrates on the analysis of the probability of AB + AG complex detection and evaluation. Poisson probability density distribution was used to estimate the probability of the adsorption of the target molecules on the biosensor's surface and, consequently, to obtain correct detection results. Many implicit and unexpected causes of error detection have been identified for AB + AG complexes using SOI-FET biosensors. We showed that accuracy and time of detection depend on the number of SOI-FET biosensors on a crystal.

摘要

SOI-FET 生物传感器(绝缘体上硅场效应晶体管)在医学、病毒学、生物技术和环境等领域是一种很有前途的设备。然而,现代生物传感器的应用面临着许多问题,需要加以改进。其中一些问题归因于传感器设计,而另一些则归因于技术限制。本工作的目的是对 SOI-FET 生物传感器的“抗体+抗原”复合物(AB+AG)检测过程进行理论研究,这也可能解决上述一些问题。我们的研究集中在分析 AB+AG 复合物检测的概率和评估上。我们使用泊松概率密度分布来估计目标分子在生物传感器表面的吸附概率,从而获得正确的检测结果。使用 SOI-FET 生物传感器检测 AB+AG 复合物时,我们发现了许多隐含的和意想不到的错误检测原因。我们表明,检测的准确性和时间取决于晶体上的 SOI-FET 生物传感器的数量。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6142/10490761/0fd77971dc0f/sensors-23-07490-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6142/10490761/65133d2851fb/sensors-23-07490-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6142/10490761/7cd1755f9f15/sensors-23-07490-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6142/10490761/0fd77971dc0f/sensors-23-07490-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6142/10490761/65133d2851fb/sensors-23-07490-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6142/10490761/7cd1755f9f15/sensors-23-07490-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6142/10490761/0fd77971dc0f/sensors-23-07490-g003.jpg

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