Cherik Iman Chahardah, Mohammadi Saeed
Department of Electrical and Computer Engineering, Semnan University, Semnan, 3513119111, Iran.
Sci Rep. 2023 Jul 17;13(1):11495. doi: 10.1038/s41598-023-38651-3.
This article presents a novel dielectric-modulated biosensor based on a tunneling field-effect transistor. It comprises a dual doping-less tunneling junction that lies above an n drain region. By employing the wet-etching technique, two cavities are carved in the gate dielectric, and with the entry of various biomolecules into the cavities, the electrostatic integrity of the gate changes, accordingly. Numerical simulations, carried out by the Silvaco ATLAS device simulator, show that including trap-assisted tunneling significantly modulate the biosensor's main parameters, such as on-state current, subthreshold swing, and transconductance and their corresponding sensitivities. We also evaluate the effect of semi-filled cavities on our proposed biosensor's performance with various configurations. The FOMs like I/I = 2.04 × 10, [Formula: see text]=1.48 × 10, and [Formula: see text]=0.61 in the presence of TAT show that our proposed biosensor has a promising performance.
本文介绍了一种基于隧穿场效应晶体管的新型介电调制生物传感器。它包括一个位于n漏极区域上方的双无掺杂隧穿结。通过采用湿法蚀刻技术，在栅极电介质中刻蚀出两个腔，随着各种生物分子进入腔中，栅极的静电完整性相应改变。由Silvaco ATLAS器件模拟器进行的数值模拟表明，包括陷阱辅助隧穿在内显著调制了生物传感器的主要参数，如导通状态电流、亚阈值摆幅和跨导及其相应的灵敏度。我们还评估了半填充腔对我们提出的生物传感器在各种配置下性能的影响。在存在陷阱辅助隧穿的情况下，如I/I = 2.04×10、[公式：见正文]=1.48×10和[公式：见正文]=0.61的优值表明我们提出的生物传感器具有良好的性能。
