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用于表现分子内双质子转移的互变异构有机半导体的3,3'-二羟基-2,2'-二茚满-1,1'-二酮衍生物的合成。

Synthesis of 3,3'-dihydroxy-2,2'-diindan-1,1'-dione derivatives for tautomeric organic semiconductors exhibiting intramolecular double proton transfer.

作者信息

Nakano Kyohei, Leong Iat Wai, Hashizume Daisuke, Bulgarevich Kirill, Takimiya Kazuo, Nishiyama Yusuke, Yamazaki Toshio, Tajima Keisuke

机构信息

RIKEN Center for Emergent Matter Science (CEMS) 2-1 Hirosawa Wako 351-0198 Japan

SANKEN, Osaka University Mihogaoka 8-1 Ibaraki Osaka 567-0047 Japan.

出版信息

Chem Sci. 2023 Oct 16;14(43):12205-12218. doi: 10.1039/d3sc04125e. eCollection 2023 Nov 8.

Abstract

To investigate potential applications of the 3,3'-dihydroxy-2,2'-biindan-1,1'-dione (BIT) structure as an organic semiconductor with intramolecular hydrogen bonds, a new synthetic route under mild conditions is developed based on the addition reaction of 1,3-dione to ninhydrin and the subsequent hydrogenation of the hydroxyl group. This route affords several new BIT derivatives, including asymmetrically substituted structures that are difficult to access by conventional high-temperature synthesis. The BIT derivatives exhibit rapid tautomerization by intramolecular double proton transfer in solution. The tautomerizations are also observed in the solid state by variable temperature measurements of X-ray diffractometry and magic angle spinning C solid-state NMR. Possible interplay between the double proton transfer and the charge transport is suggested by quantum chemical calculations. The monoalkylated BIT derivative with a lamellar packing structure suitable for lateral charge transport in films shows a hole mobility of up to 0.012 cm V s with a weak temperature dependence in an organic field effect transistor.

摘要

为了研究3,3'-二羟基-2,2'-联茚满-1,1'-二酮(BIT)结构作为具有分子内氢键的有机半导体的潜在应用,基于1,3-二酮与茚三酮的加成反应以及随后羟基的氢化反应,开发了一种温和条件下的新合成路线。该路线提供了几种新的BIT衍生物,包括通过传统高温合成难以获得的不对称取代结构。BIT衍生物在溶液中通过分子内双质子转移表现出快速的互变异构。通过可变温度的X射线衍射测量和魔角旋转碳固体核磁共振也在固态中观察到了互变异构。量子化学计算表明双质子转移与电荷传输之间可能存在相互作用。具有适合薄膜中横向电荷传输的层状堆积结构的单烷基化BIT衍生物在有机场效应晶体管中显示出高达0.012 cm² V⁻¹ s⁻¹的空穴迁移率,且温度依赖性较弱。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f790/10631252/92665bb0c01c/d3sc04125e-f1.jpg

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