Farag Omar F, Kotb Omar M, Ghazaly M El, El-Sayed Naglaa M
Department of Physics, Faculty of Science, Zagazig University, PO 44519, Zagazig, Egypt.
Sci Rep. 2024 Jan 27;14(1):2262. doi: 10.1038/s41598-024-52628-w.
The response of the modified GAFCHROMIC EBT2 radiochromic film to DC Oxygen glow discharge plasma was investigated using a flatbed scanner and an UV-Vis spectrophotometer. The film was modified by removing the polyester overlaminate, adhesive, and topcoat layers with a total thickness of 80 µm, and is now referred to as EBT2-M. The EBT2-M films were exposed to DC Oxygen plasma for different durations: 0, 0.5, 1, 2, 3, 4, 7, and 10 min. The exposed films exhibit coloration homogeneity with an average variation of (1.6 ± 0.3) × 10 pixel values/µm, irrespective of the applied exposure time. The pixel values of the red-and-green channels and weighted grayscale images decreased exponentially with different sensitivity amounts to [Formula: see text] 39.67, 49.69, and 42.11 min, respectively, as the exposure time increased. The two absorption peaks at 580 ± 4 nm and 632 ± 4 nm in the UV-Vis absorption spectra of the exposed GAFCHROMIC EBT2-M radiochromic films are increasing with increasing exposure time up to 4 min, thereafter saturated for prolonged exposure time. The integrated absorbance in the range from 400 to 700 nm is linearly correlated with the exposure time. The indirect and direct optical energy band gaps and Urbach energy of the modified GAFCHROMIC EBT2 film are weakly correlated with the exposure time. These findings suggest the utilization of the modified GAFCHROMIC EBT2 radiochromic film as a novel and simple technique for plasma diagnostics.
使用平板扫描仪和紫外可见分光光度计研究了改性的GAFCHROMIC EBT2放射变色膜对直流氧辉光放电等离子体的响应。通过去除总厚度为80μm的聚酯保护膜、粘合剂和面漆层对该膜进行改性,现在将其称为EBT2-M。将EBT2-M膜暴露于直流氧等离子体中不同时间:0、0.5、1、2、3、4、7和10分钟。无论施加的曝光时间如何,曝光后的膜均呈现颜色均匀性,平均变化为(1.6±0.3)×10像素值/μm。随着曝光时间增加,红色和绿色通道以及加权灰度图像的像素值分别以不同的灵敏度指数下降至[公式:见正文]39.67、49.69和42.11分钟。暴露的GAFCHROMIC EBT2-M放射变色膜的紫外可见吸收光谱中580±4nm和632±4nm处的两个吸收峰随着曝光时间增加至4分钟而增加,此后对于延长的曝光时间达到饱和。400至700nm范围内的积分吸光度与曝光时间呈线性相关。改性的GAFCHROMIC EBT2膜的间接和直接光学带隙以及乌尔巴赫能量与曝光时间弱相关。这些发现表明改性的GAFCHROMIC EBT2放射变色膜可作为一种用于等离子体诊断的新颖且简单的技术。