Liu Meizhuang, Gou Jian, Liu Zizhao, Chen Zuxin, Ye Yuliang, Xu Jing, Xu Xiaozhi, Zhong Dingyong, Eda Goki, Wee Andrew T S
School of Physics, Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou, 510006, China.
Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore.
Nat Commun. 2024 Feb 26;15(1):1765. doi: 10.1038/s41467-024-46087-0.
Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe. The lattice-matched MoSe nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe with the formation of MoSe-CrSe heterostructures. Scanning tunneling microscopy and non-contact atomic force microscopy studies reveal the atomically sharp heterostructure interfaces and the characteristic defects of mirror twin boundaries emerging in the H-phase CrSe monolayers. The type-I straddling band alignments with band bending at the heterostructure interfaces are directly visualized with atomic precision. The mirror twin boundaries in the H-phase CrSe exhibit the Tomonaga-Luttinger liquid behavior in the confined one-dimensional electronic system. Our work provides a promising strategy for phase engineering of 2D TMDs, thereby promoting the property research and device applications of specific phases.
二维过渡金属二硫属化物（2D-TMDs）的相工程为探索独特的相特异性性质和实现新的期望功能提供了机会。在此，我们报道一种相选择性面内异质外延方法来生长半导体H相CrSe。晶格匹配的MoSe纳米带被用作面内异质外延模板，以引发H相CrSe的生长并形成MoSe-CrSe异质结构。扫描隧道显微镜和非接触原子力显微镜研究揭示了原子级尖锐的异质结构界面以及在H相CrSe单层中出现的镜面对称孪晶界的特征缺陷。具有在异质结构界面处能带弯曲的I型跨带排列以原子精度直接可视化。H相CrSe中的镜面对称孪晶界在受限的一维电子系统中表现出汤川-卢廷格液体行为。我们的工作为二维TMDs的相工程提供了一种有前景的策略，从而推动特定相的性质研究和器件应用。
