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用于改善微型发光二极管散热的超薄陶瓷基板。

Ultra-Thin Ceramic Substrates for Improved Heatsinking for microLEDs.

作者信息

McGinn Christine K, Kumar Vikrant, Noga Megan, Lamport Zachary, Kymissis Ioannis

机构信息

Department of Electrical Engineering, Columbia University, New York, NY.

出版信息

Adv Mater Technol. 2023 Oct 10;8(19). doi: 10.1002/admt.202300390. Epub 2023 Aug 29.

DOI:10.1002/admt.202300390
PMID:38559403
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10977661/
Abstract

MicroLEDs provide unrivaled luminance and operating lifetime, which has led to significant activity using devices for display and non-display applications. The small size and high power density of microLEDs, however, causes increased adverse heating effects which can limit performance. A new generation of electrically insulating high thermal conductivity materials, such as alumina, has been proposed to mitigate these thermal effects when used as a substrate as an alternative to glass. This strategy then could be used as a method of passive heatsinking to improve the overall performance of the microLED. In this work, a newly available material, an 80 micron thick alumina ceramic substrate, is shown to yield a 30 % improvement on average in the maximum current drive over a glass substrate.

摘要

微型发光二极管具有无与伦比的亮度和工作寿命,这使得使用其制造的器件在显示和非显示应用领域都有大量的研究活动。然而,微型发光二极管的小尺寸和高功率密度会导致不利的热效应增加,从而可能限制其性能。有人提出使用新一代电绝缘的高导热材料,如氧化铝,作为玻璃的替代品用作基板,以减轻这些热效应。这种策略可以用作一种被动散热的方法来提高微型发光二极管的整体性能。在这项工作中,一种新上市的材料,即80微米厚的氧化铝陶瓷基板,与玻璃基板相比,在最大电流驱动方面平均提高了30%。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5594/10977661/432385fef5ff/nihms-1928607-f0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5594/10977661/562058e10d39/nihms-1928607-f0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5594/10977661/8d9c8f68f08f/nihms-1928607-f0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5594/10977661/b59dbe790831/nihms-1928607-f0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5594/10977661/5bc6676ea9fc/nihms-1928607-f0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5594/10977661/6e4d8e4e1065/nihms-1928607-f0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5594/10977661/432385fef5ff/nihms-1928607-f0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5594/10977661/562058e10d39/nihms-1928607-f0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5594/10977661/8d9c8f68f08f/nihms-1928607-f0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5594/10977661/b59dbe790831/nihms-1928607-f0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5594/10977661/5bc6676ea9fc/nihms-1928607-f0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5594/10977661/6e4d8e4e1065/nihms-1928607-f0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5594/10977661/432385fef5ff/nihms-1928607-f0007.jpg

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本文引用的文献

1
Enhanced Heat Dissipation in Gallium Nitride-Based Light-Emitting Diodes by Piezo-phototronic Effect.基于氮化镓的发光二极管中压电光电子效应增强散热
Nano Lett. 2021 May 12;21(9):4062-4070. doi: 10.1021/acs.nanolett.1c00999. Epub 2021 Apr 22.
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Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis.通过载流子和热动力学分析确定基于氮化镓铟的发光二极管中热衰减的原因。
Sci Rep. 2020 Oct 15;10(1):17433. doi: 10.1038/s41598-020-74585-w.
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Light Sci Appl. 2020 Jun 18;9:105. doi: 10.1038/s41377-020-0341-9. eCollection 2020.
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Nat Commun. 2020 Apr 28;11(1):2063. doi: 10.1038/s41467-020-15769-w.
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Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements.氮化铟镓/氮化镓发光二极管中的热效应和效率下降:利用与温度相关的射频测量解耦多物理效应。
Sci Rep. 2019 Dec 27;9(1):19921. doi: 10.1038/s41598-019-56390-2.
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