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用于有机忆阻器的基于离子薁的薄膜的分子势和氧化还原共调控阴极电合成

Molecular-Potential and Redox Coregulated Cathodic Electrosynthesis toward Ionic Azulene-Based Thin Films for Organic Memristors.

作者信息

Zhang Qiongshan, Wu Dongchuang, Fu Yubin, Li Jinyong, Chen Yu, Zhang Bin

机构信息

Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China.

School of Energy and Power Engineering, North University of China, Taiyuan 030051, China.

出版信息

ACS Appl Mater Interfaces. 2024 May 1;16(17):22217-22228. doi: 10.1021/acsami.3c19527. Epub 2024 Apr 19.

Abstract

Organic memristors as promising electronic units are attracting significant attention owing to their simplicity of molecular structure design. However, fabricating high-quality organic films via novel synthetic technologies and exploring unprecedented chemical structures to achieve excellent memory performance in organic memristor devices are highly challenging. In this work, we report a cathodic electropolymerization to synthesize an ionic azulene-based memristive film (PPMAz-PyBr) under the molecular-potential and redox coregulation. During the cathodic electropolymerization process, electropositive pyridinium salts migrate to the cathode under an electric field, undergo a reduction-coupling deprotonation reaction, and polymerize into a uniform film with a controllable thickness on the electrode surface. The prepared Al/PPMAz-PyBr/ITO devices not only exhibit a high ON/OFF ratio of 1.8 × 10, high stability, long memory retention, and endurance under a wide range of voltage scans, but also achieve excellent multilevel storage and history-dependent memristive performance. In addition, the devices can mimic important biosynaptic functions, such as learning/forgetting function, synaptic enhancement/inhibition, paired-pulse facilitation/depression, and spiking-rate-dependent plasticity. The tunable memristive performances are attributed to the capture of free electrons on pyridinium cations, the migration of the aluminum ions (Al), and the form of Al conductive filaments under voltage scans.

摘要

有机忆阻器作为很有前景的电子元件,因其分子结构设计简单而备受关注。然而,通过新颖的合成技术制备高质量有机薄膜,并探索前所未有的化学结构以在有机忆阻器器件中实现优异的存储性能,极具挑战性。在这项工作中,我们报道了一种阴极电聚合方法,在分子电势和氧化还原共调节下合成基于离子薁的忆阻薄膜(PPMAz-PyBr)。在阴极电聚合过程中,带正电的吡啶盐在电场作用下迁移到阴极,发生还原偶联去质子化反应,并在电极表面聚合成厚度可控的均匀薄膜。制备的Al/PPMAz-PyBr/ITO器件不仅在宽电压扫描范围内表现出1.8×10的高开/关比、高稳定性、长记忆保持和耐久性,还实现了优异的多级存储和历史依赖型忆阻性能。此外,该器件能够模拟重要的生物突触功能,如学习/遗忘功能、突触增强/抑制、双脉冲易化/抑制以及脉冲率依赖可塑性。忆阻性能的可调性归因于吡啶阳离子上自由电子的捕获、铝离子(Al)的迁移以及电压扫描下Al导电细丝的形成。

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