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非中心对称铁磁体中的量子度量三阶非线性霍尔效应。

Quantum metric third-order nonlinear Hall effect in a non-centrosymmetric ferromagnet.

作者信息

Yu Hao, Li Xinjie, Bie Ya-Qing, Yan Luo, Zhou Liujiang, Yu Peng, Yang Guowei

机构信息

Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, PR China.

State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, PR China.

出版信息

Nat Commun. 2025 Aug 18;16(1):7698. doi: 10.1038/s41467-025-63133-7.

Abstract

Berry curvature in the imaginary part of quantum geometry has been confirmed to play a role in the nonlinear Hall effect of Weyl semimetals. However, exploration of the influence of the real component of the quantum geometry, the quantum metrics, on nonlinear Hall transport has primarily focused on second-order effects at lower temperatures, rather than higher-order transport. In this study, we observed a significant third-order nonlinear Hall effect induced by quantum metric in non-centrosymmetric ferromagnetic FeGeTe at room temperature. This effect was confirmed through distinct scaling behaviors regardless of scattering time and a third-order signal dependent on the electron spin state. Notably, our Hall device exhibited an ultrahigh third-order conductivity of 72 μm·S·V, surpassing previous studies in Berry curvature-induced third-order nonlinear Hall effects by approximately tenfold, thus enhancing the device's third-order current conversion efficiency. Moreover, we extended the second-order quantum metric dipole scaling to derive a third-order equation. Our findings lay the groundwork for the development of room-temperature, low-power quantum spintronic devices leveraging the third-order nonlinear Hall effect.

摘要

量子几何虚部中的贝里曲率已被证实对外尔半金属的非线性霍尔效应有影响。然而,对量子几何实部(量子度规)对非线性霍尔输运影响的探索主要集中在低温下的二阶效应,而非高阶输运。在本研究中,我们在室温下观察到非中心对称铁磁体FeGeTe中由量子度规诱导的显著三阶非线性霍尔效应。通过与散射时间无关的独特标度行为以及依赖于电子自旋态的三阶信号证实了这一效应。值得注意的是,我们的霍尔器件展现出72 μm·S·V的超高三阶电导率,比之前关于贝里曲率诱导的三阶非线性霍尔效应的研究高出约十倍,从而提高了器件的三阶电流转换效率。此外,我们扩展了二阶量子度规偶极标度以推导三阶方程。我们的研究结果为利用三阶非线性霍尔效应开发室温、低功耗量子自旋电子器件奠定了基础。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8ab6/12361558/624a44bc0beb/41467_2025_63133_Fig1_HTML.jpg

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