Li Yang, Fan Ningbo, Wu Jie, Xu Bin, Li Xuexin, Liu Xuechen, Xiao Yizhou, Hou Dingwei, Feng Xinya, Zhang Jinjing, Zhang Shujun, Li Jinglei, Li Fei
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, China.
Institute of Theoretical and Applied Physics, Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou, China.
Nat Commun. 2024 Oct 17;15(1):8958. doi: 10.1038/s41467-024-53287-1.
Dielectric ceramics possess a unique competitive advantage in electronic systems due to their high-power density and excellent reliability. NaBiTiO-based ceramics, one type of extensively studied energy storage dielectric, however, often experience A-site element volatilization and Ti reduction during high-temperature sintering. These issues may result in increased energy loss, reduced polarization and low dielectric breakdown electric field, ultimately making it challenging to achieve both high energy storage density and efficiency. To address these issues, we introduce a synergistic optimization strategy that combine polarization engineering and grain alignment engineering. First principles calculations and experimental analyses show that the doping of Mn can suppress the reduction of Ti in NaBiTiO-based ceramics and enhance ion off-centering displacements, thereby reducing energy loss and improving polarization. In addition, we prepared multilayer ceramic capacitors with grains oriented along the <111> direction using the template grain growth method. This approach effectively reduces electric-field-induced strain by 37% and markedly enhances breakdown electric field by 42% when compared with nontextured counterpart. As a result of this comprehensive strategy, <111 >-textured NaBiTiO-based multilayer ceramic capacitors achieve an ultra-high energy density of 15.7 J·cm and an excellent efficiency beyond 95% at 850 kV·cm, exhibiting a superior overall energy storage performance.
介电陶瓷由于其高功率密度和出色的可靠性,在电子系统中具有独特的竞争优势。然而,作为一类被广泛研究的储能电介质,基于NaBiTiO的陶瓷在高温烧结过程中经常会出现A位元素挥发和Ti还原的问题。这些问题可能导致能量损失增加、极化降低以及介电击穿电场降低,最终使得实现高储能密度和效率都具有挑战性。为了解决这些问题,我们引入了一种将极化工程和晶粒取向工程相结合的协同优化策略。第一性原理计算和实验分析表明,Mn的掺杂可以抑制基于NaBiTiO的陶瓷中Ti的还原,并增强离子偏心位移,从而减少能量损失并改善极化。此外,我们使用模板晶粒生长法制备了晶粒沿<111>方向取向的多层陶瓷电容器。与无织构的对应物相比,这种方法有效地将电场诱导应变降低了37%,并显著提高了击穿电场42%。由于这种综合策略,<111>织构的基于NaBiTiO的多层陶瓷电容器在850 kV·cm下实现了15.7 J·cm的超高能量密度和超过95%的优异效率,展现出卓越的整体储能性能。