Kim Seung-Il, Moon Ji-Yun, Bae Sanggeun, Xu Zhihao, Meng Yuan, Park Ji-Won, Lee Jae-Hyun, Bae Sang-Hoon
Department of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering Washington University in St. Louis St. Louis, MO, 63130, USA.
Department of Energy Systems Research and Department of Materials Science and Engineering Ajou University, Suwon, 16499, South Korea.
Small Methods. 2025 May;9(5):e2401551. doi: 10.1002/smtd.202401551. Epub 2025 Jan 6.
Wide-bandgap semiconductors (WBGS) with energy bandgaps larger than 3.4 eV for GaN and 3.2 eV for SiC have gained attention for their superior electrical and thermal properties, which enable high-power, high-frequency, and harsh-environment devices beyond the capabilities of conventional semiconductors. Pushing the potential of WBGS boundaries, current research is redefining the field by broadening the material landscape and pioneering sophisticated synthesis techniques tailored for state-of-the-art device architectures. Efforts include the growth of freestanding nanomembranes, the leveraging of unique interfaces such as van der Waals (vdW) heterostructure, and the integration of 2D with 3D materials. This review covers recent advances in the synthesis and applications of freestanding WBGS nanomembranes, from 2D to 3D materials. Growth techniques for WBGS, such as liquid metal and epitaxial methods with vdW interfaces, are discussed, and the role of layer lift-off processes for producing freestanding nanomembranes is investigated. The review further delves into electronic devices, including field-effect transistors and high-electron-mobility transistors, and optoelectronic devices, such as photodetectors and light-emitting diodes, enabled by freestanding WBGS nanomembranes. Finally, this review explores new avenues for research, highlighting emerging opportunities and addressing key challenges that will shape the future of the field.
对于氮化镓（GaN）而言，带隙大于3.4电子伏特，对于碳化硅（SiC）而言，带隙大于3.2电子伏特的宽带隙半导体（WBGS），因其卓越的电学和热学性能而受到关注，这些性能使得制造出超越传统半导体能力的高功率、高频和适应恶劣环境的器件成为可能。当前的研究正在拓展宽带隙半导体的边界潜力，通过拓宽材料范围和开创针对先进器件架构的精密合成技术来重新定义该领域。这些努力包括独立纳米膜的生长、利用诸如范德华（vdW）异质结构等独特界面以及二维材料与三维材料的集成。本综述涵盖了从二维到三维材料的独立宽带隙半导体纳米膜在合成和应用方面的最新进展。讨论了宽带隙半导体的生长技术，如具有范德华界面的液态金属和外延方法，并研究了层剥离工艺在制备独立纳米膜中的作用。本综述进一步深入探讨了由独立宽带隙半导体纳米膜实现的电子器件，包括场效应晶体管和高电子迁移率晶体管，以及光电器件，如光电探测器和发光二极管。最后，本综述探索了新的研究途径，突出了新兴机遇并解决了将塑造该领域未来的关键挑战。
