Moreau J L, Schmitt P, Karli P
Physiol Behav. 1986 Jan;36(1):9-15. doi: 10.1016/0031-9384(86)90065-x.
Electrical stimulation of the ventromedial tegmentum (VT) exerts a dual effect on escape responding, induced by stimulating either the medial hypothalamus (MH) or the dorsal part of the central gray matter (CG), namely a suppressant effect which reduces MH or CG induced escape responses and a facilitating one which increases these same responses. The relative magnitude of these effects appears to depend on both the location of the VT stimulation site and the stimulation intensity applied. Furthermore, VT stimulation is often more effective in suppressing escape responding induced by MH as opposed to CG stimulation. VT stimulation has clear rewarding effects but seems to have also aversive effects. The VT sites whose stimulation induces escape suppression seem to yield less marked aversive effects than those sites whose stimulation induces escape facilitation. Furthermore, a negative correlation was found to exist between the escape rate induced by a combined CG/VT or MH/VT stimulation and the self-stimulation rate yielded by these VT sites. These results suggest that the effects of a VT stimulation on escape responding induced by electrical brain stimulation are somehow related to the rewarding and/or aversive effects of this same VT stimulation.
对腹内侧被盖区（VT）进行电刺激，对由刺激内侧下丘脑（MH）或中央灰质背侧部分（CG）所诱发的逃避反应会产生双重效应，即一种抑制效应，可减少MH或CG诱发的逃避反应，以及一种易化效应，可增强同样的反应。这些效应的相对强度似乎取决于VT刺激部位的位置以及所施加的刺激强度。此外，与CG刺激相比，VT刺激在抑制由MH诱发的逃避反应方面往往更有效。VT刺激具有明显的奖赏效应，但似乎也有厌恶效应。刺激时诱发逃避抑制的VT部位，其产生的厌恶效应似乎不如刺激时诱发逃避易化的部位那么明显。此外，发现在CG/VT或MH/VT联合刺激所诱发的逃避率与这些VT部位产生的自我刺激率之间存在负相关。这些结果表明，VT刺激对脑电刺激诱发的逃避反应的影响，在某种程度上与同一VT刺激的奖赏和/或厌恶效应有关。
