Schmitt P, Sandner G, Colpaert F C, De Witte P
Behav Brain Res. 1983 Jun;8(3):289-307. doi: 10.1016/0166-4328(83)90175-4.
Electrical stimulation of the ventral part of the mesencephalic central gray affects escape responding induced by stimulation of either the medial hypothalamus (MH) or dorsal central gray (CG) in the rat. The sign and magnitude of the effect appeared to depend on the following factors: (1) The location of the site stimulated in the ventral central gray and the intensity of the stimulation. A stimulation of the dorsal raphe nucleus (DR) which induced a marked rewarding and a low aversive effect reliably suppressed MH or CG induced escape. Stimulation of sites located at the boundary between DR and central gray enhanced escape at low intensities and suppressed it at higher intensities. When located more laterally in the ventral central gray, the stimulation induced less rewarding and more marked aversive effects and it reliably enhanced MH or CG induced escape. (2) The kind of stimulation applied (monopolar or bipolar). (3) The location of the site (MH or CG) from which the stimulation-induced escape responses were obtained.
对大鼠中脑中央灰质腹侧部分进行电刺激，会影响由内侧下丘脑（MH）或背侧中央灰质（CG）刺激所诱发的逃避反应。这种效应的正负及大小似乎取决于以下因素：（1）腹侧中央灰质中受刺激部位的位置及刺激强度。刺激中缝背核（DR）会产生显著的奖赏效应和较低的厌恶效应，能可靠地抑制由MH或CG诱发的逃避反应。刺激位于DR与中央灰质边界处的部位，在低强度时会增强逃避反应，而在高强度时则会抑制逃避反应。当位于腹侧中央灰质更外侧时，刺激诱发的奖赏效应较小而厌恶效应更显著，并且能可靠地增强由MH或CG诱发的逃避反应。（2）所施加刺激的类型（单极或双极）。（3）获得刺激诱发逃避反应的部位（MH或CG）的位置。
