Cao Peng, Bentley Matthew, You Minghui, Wei Jiaqi, Peng Hongling, Wang Tiancai, Song Chunxu, Zhuang Qiandong, Zheng Wanhua
Opt Lett. 2024 Dec 1;49(23):6769-6772. doi: 10.1364/OL.543761.
An InGaAs/GaAsSb type II superlattice (T2SL) absorber is a promising alternative material for a short-wavelength infrared (SWIR) photodetector due to the largely tunable bandgap by adjusting the thickness and material composition of InGaAs and GaAsSb in each T2SL period. We demonstrate a pBn type SWIR photodetector consisting of a strained InGaAs/GaAsSb T2SL absorber and AlGaAsSb barrier. The device presents an ultralow dark current density of 1.81 × 10 A/cm and a peak responsivity of 0.38 A/W under a reverse bias of -1 V at 300 K. The detector shows a peak detectivity of 1.62 × 10cm·Hz/W and 4.63 × 10cm·Hz/W under a reverse bias of -1 V at 260 K and 300 K, respectively. Moreover, our photodetector demonstrates an extended 100% cutoff wavelength response up to 2.2 μm.
由于通过调整每个InGaAs/GaAsSb II型超晶格（T2SL）周期中InGaAs和GaAsSb的厚度及材料成分，其带隙可在很大范围内调谐，因此InGaAs/GaAsSb T2SL吸收体是一种很有前景的短波长红外（SWIR）光电探测器替代材料。我们展示了一种由应变InGaAs/GaAsSb T2SL吸收体和AlGaAsSb势垒组成的pBn型SWIR光电探测器。该器件在300K、-1V反向偏压下呈现出1.81×10 A/cm的超低暗电流密度和0.38 A/W的峰值响应率。该探测器在260K和300K、-1V反向偏压下的峰值探测率分别为1.62×10cm·Hz/W和4.63×10cm·Hz/W。此外，我们的光电探测器在高达2.2μm的波长处呈现出扩展的100%截止波长响应。
