Yang Dengyu, Cao Qingrui, Akyuz Erin, Hayden John, Nordlander Josh, Mercer Ian, Yu Muqing, Ramachandran Ranjani, Irvin Patrick, Maria Jon-Paul, Hunt Benjamin M, Levy Jeremy
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States.
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States.
Nano Lett. 2024 Dec 25;24(51):16231-16238. doi: 10.1021/acs.nanolett.4c03574. Epub 2024 Dec 13.
We demonstrate an approach to creating nanoscale potentials in van der Waals layers integrated with a buried programmable ferroelectric layer. Using ultra-low-voltage electron beam lithography (ULV-EBL), we can program the ferroelectric polarization in AlBN (AlBN) thin films, generating structures with sizes as small as 35 nm. We demonstrate the ferroelectric field effect with a graphene/vdW stack on AlBN by creating a p-n junction. This resist-free, high-resolution, contactless patterning method offers a new pathway to integrate ferroelectric films with a wide range of two-dimensional layers including transition-metal dichalcogenides (TMD), enabling arbitrary programming and top-down creation of multifunctional devices.
我们展示了一种在与埋入式可编程铁电层集成的范德华层中创建纳米级电势的方法。使用超低压电子束光刻（ULV-EBL），我们可以对AlBN（氮化铝硼）薄膜中的铁电极化进行编程，生成尺寸小至35 nm的结构。通过创建一个p-n结，我们在AlBN上的石墨烯/范德华堆栈中展示了铁电场效应。这种无抗蚀剂、高分辨率、非接触式图案化方法为将铁电薄膜与包括过渡金属二硫属化物（TMD）在内的各种二维层集成提供了一条新途径，能够对多功能器件进行任意编程和自上而下的创建。
