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基于功能化氧化石墨烯的高灵敏度低频声学传感器。

Highly Sensitive Low-Frequency Acoustic Sensor Based on Functionalized Graphene Oxide.

作者信息

Chen Anqi, Xi Lin, Li Tianyu, Du Xiaona, Zhang Xiaoyan, Hou Lili

机构信息

State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin, 300072, China.

The College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China.

出版信息

Small. 2024 Dec 31:e2409043. doi: 10.1002/smll.202409043.

DOI:10.1002/smll.202409043
PMID:39737623
Abstract

Developing miniaturized low-frequency acoustic sensors with high sensitivity is crucial for diverse applications, including geological monitoring and aerospace exploration. However, the performance of low-frequency acoustic sensor is constrained by the limited mechanical robustness of traditional sensing films at nanoscale thickness. Here, a functionalized graphene oxide (GO)-based Fabry-Perot (FP) low-frequency sensor is proposed, with characteristics of compact size, resistance to electromagnetic interference high-sensitivity low minimum detectable pressure (MDP), and a high signal-to-noise ratio (SNR). The functionalized GO is synthesized through the reaction of GO with dodecylamine and the uniform film is prepared by a self-assembly method. This sensor exhibits a sensitivity of -91.92 dB re 1 rad/µPa at 10-200 Hz with a fluctuation of 0.4 dB, ≈5.6 times higher than that of non-functionalized GO-based sensors prepared by a direct evaporation method. The MDP of this sensor is determined to be 0.333 µPa/Hz @20 Hz with a SNR of 136.34 dB, which outperforms previously reported low-frequency sensors using conventional metals or polymers as sensing films.

摘要

开发具有高灵敏度的小型化低频声学传感器对于包括地质监测和航空航天探索在内的各种应用至关重要。然而,低频声学传感器的性能受到纳米级厚度的传统传感薄膜有限的机械鲁棒性的限制。在此,提出了一种基于功能化氧化石墨烯(GO)的法布里-珀罗(FP)低频传感器,其具有尺寸紧凑、抗电磁干扰、高灵敏度、低最小可检测压力(MDP)和高信噪比(SNR)的特点。通过GO与十二烷基胺的反应合成功能化GO,并通过自组装方法制备均匀薄膜。该传感器在10 - 200Hz频率范围内表现出-91.92dB re 1rad/µPa的灵敏度,波动为0.4dB,约为通过直接蒸发法制备的非功能化GO基传感器的5.6倍。该传感器的MDP在20Hz时确定为0.333µPa/Hz,SNR为136.34dB,优于先前报道的使用传统金属或聚合物作为传感薄膜的低频传感器。

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