Layer dependent thermal transport properties of one- to three-layer magnetic Fe:MoS.

Two-Dimensional transition metal dichalcogenides have been the subject of extensive attention thanks to their unique properties and atomically thin structure. Because of its unprecedented room-temperature magnetic properties, iron-doped MoS (Fe:MoS) is considered the next-generation quantum and magnetic material. It is essential to understand Fe:MoS's thermal behavior since temperature and thermal load/activation are crucial for their magnetic properties and the current nano and quantum devices have been severely limited by thermal management. In this work, Fe:MoS is synthesized by doping Fe atoms into MoS using the chemical vapor deposition synthesis and a refined version of opto-thermal Raman technique is used to study the thermal transport properties of Fe:MoS in the forms of single (1L), bilayer (2L), and tri-layer (3L). In the Opto-thermal Raman technique, a laser is focused on the center of a thin film and used to measure the peak position of a Raman-active mode. The lateral thermal conductivity of 1-3L of Fe:MoS and the interfacial thermal conductance between Fe:MoS and the substrate were obtained by analyzing the temperature-dependent and power-dependent Raman measurement, laser power absorption coefficient, and laser spot sizes. At the room temperature, the lateral thermal conductivity of 1-3L Fe:MoS were discovered as 24 ± 11, 18 ± 9, and 16 ± 8 W/m·K, respectively which presents a decreasing trend from 1 to 3L and is about 40% lower than that of MoS. The interfacial thermal conductance of between Fe:MoS and the substrate were discovered to be 0.3 ± 0.2, 1.1 ± 0.7, and 3.0 ± 2.3 MW/m⋅K for 1L to 3L respectively. We also characterized Fe:MoS's thermal transport at high temperature, and calculated Fe:MoS's thermal transport by density theory function. These findings will shed light on the thermal management and thermoelectric designs for Fe:MoS based nano and quantum electronic devices.