Jahan Nusrat, Pritu Farah B H, Islam Md Rasidul, Neher Budrun, Rahman M Mahbubur, Ahmed Farid
Department of Physics, Jahangirnagar University, Savar, Dhaka, 1342, Bangladesh.
Department of Electrical and Electronic Engineering, Bangamata Sheikh Fojilatunnesa Mujib Science and Technology University, Jamalpur, 2012, Bangladesh.
Heliyon. 2025 Jan 16;11(2):e41886. doi: 10.1016/j.heliyon.2025.e41886. eCollection 2025 Jan 30.
Organic-inorganic hybrid halide perovskites are emerging as promising materials for solar energy due to their unique structures and electronic properties. However, the commonly studied MAPbI and FAPbI are toxic and less stable, prompting the necessity for safer replacements. Using the density functional theory (DFT), this study explored the effects of strains and spin-orbit coupling (SOC) on Sn-based FASnBr perovskites and the accuracy and validity of the obtained results were confirmed with the existing experimental results. The FASnBr perovskites paraded direct bandgaps of 1.20 eV without SOC and 0.89 eV with SOC. The tensile strains upsurged the bandgaps, while compressive strains reduced them. The SOC significantly diminished the bandgaps and effective carrier mass, and 8 % of compressive strains with SOC showed unique bandgap behaviour. For unstrained FASnBr perovskites, the real dielectric constant was 4.4 at zero photon energy, with a peak of 6.5 in the visible range. The maximum loss occurred at a photon energy of 21.88 eV. It was also observed that the tensile strain increases the loss to 1.46 at 20.20 eV. The tensile strains also increased absorption, while compressive strains caused a redshift in the dielectric function, loss spectrum, and absorption peaks. Due to their excellent optical and electronic properties, FASnBr perovskites are considered highly promising for lead-free optoelectronic applications like LEDs, solar panels, lasers, and optical detectors.
有机-无机杂化卤化物钙钛矿因其独特的结构和电子性质,正成为太阳能领域颇具前景的材料。然而,常见的研究对象MAPbI和FAPbI具有毒性且稳定性较差,因此有必要寻找更安全的替代物。本研究采用密度泛函理论(DFT),探究了应变和自旋轨道耦合(SOC)对锡基FASnBr钙钛矿的影响,并通过现有实验结果验证了所得结果的准确性和有效性。FASnBr钙钛矿在无SOC时的直接带隙为1.20 eV,有SOC时为0.89 eV。拉伸应变使带隙增大,而压缩应变则使其减小。SOC显著减小了带隙和有效载流子质量,8%的压缩应变与SOC共同作用时表现出独特的带隙行为。对于无应变的FASnBr钙钛矿,在零光子能量下的实介电常数为4.4,在可见光范围内峰值为6.5。最大损耗发生在光子能量为21.88 eV处。还观察到,拉伸应变在20.20 eV时使损耗增加到1.46。拉伸应变还增加了吸收率,而压缩应变则导致介电函数、损耗谱和吸收峰发生红移。由于其优异的光学和电子性质,FASnBr钙钛矿被认为在用于发光二极管、太阳能电池板、激光器和光学探测器等无铅光电子应用方面极具前景。