Ou Yangting, Shen Zhuoshan, Xie Juze, Pan Jisheng
School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China.
State Key Laboratory for High Performance Tools, Guangzhou 510006, China.
Micromachines (Basel). 2025 Feb 12;16(2):210. doi: 10.3390/mi16020210.
Electro-Fenton chemical mechanical polishing primarily regulates the generation of hydroxyl radicals (·OH) via the Fenton reaction through an applied electric field, which subsequently influences the formation and removal of the oxide layer on the workpiece surface, thereby impacting the overall polishing quality and rate. This study employs Pin-Disk friction and wear experiments to investigate the material removal behavior of single-crystal GaN during electro-Fenton chemical mechanical polishing. Utilizing a range of analytical techniques, including coefficient of friction (COF) curves, surface morphology assessments, cross-sectional analysis, and power spectral density (PSD) measurements on the workpiece surface, we examine the influence of abrasives, polishing pads, polishing pressure, and other parameters on the electro-Fenton chemical-mechanical material removal process. Furthermore, this research provides preliminary insights into the synergistic removal mechanisms associated with the electro-Fenton chemical-mechanical action in single-crystal GaN. The experimental results indicate that optimal mechanical removal occurs when using a W0.5 diamond at a concentration of 1.5 wt% combined with a urethane pad (SH-Q13K-600) under a pressure of 0.2242 MPa.
电芬顿化学机械抛光主要通过施加电场，经由芬顿反应来调节羟基自由基（·OH）的产生，这随后会影响工件表面氧化层的形成与去除，从而影响整体抛光质量和速率。本研究采用销盘摩擦磨损实验来研究单晶GaN在电芬顿化学机械抛光过程中的材料去除行为。利用一系列分析技术，包括摩擦系数（COF）曲线、表面形貌评估、截面分析以及对工件表面的功率谱密度（PSD）测量，我们研究了磨料、抛光垫、抛光压力等参数对电芬顿化学机械材料去除过程的影响。此外，本研究还对单晶GaN中与电芬顿化学机械作用相关的协同去除机制提供了初步见解。实验结果表明，在0.2242 MPa的压力下，使用浓度为1.5 wt%的W0.5金刚石与聚氨酯垫（SH-Q13K-600）组合时，可实现最佳的机械去除效果。
