Greenhorn Scott, Bano Edwige, Stambouli Valérie, Zekentes Konstantinos
The Institute of Electronic Structure and Laser of the Foundation for Research and Technology-Hellas (MRG-IESL/FORTH), GR-70013 Heraklion, Greece.
Laboratoire des Matériaux et de la Génie Physique, Université Grenoble Alpes, Centre National de la Recherche Scientifique, Institut Polytechnique de Grenoble, 38016 Grenoble, France.
Materials (Basel). 2024 Feb 29;17(5):1135. doi: 10.3390/ma17051135.
Amorphous silicon carbide (a-SiC) is a wide-bandgap semiconductor with high robustness and biocompatibility, making it a promising material for applications in biomedical device passivation. a-SiC thin film deposition has been a subject of research for several decades with a variety of approaches investigated to achieve optimal properties for multiple applications, with an emphasis on properties relevant to biomedical devices in the past decade. This review summarizes the results of many optimization studies, identifying strategies that have been used to achieve desirable film properties and discussing the proposed physical interpretations. In addition, divergent results from studies are contrasted, with attempts to reconcile the results, while areas of uncertainty are highlighted.
非晶碳化硅（a-SiC）是一种具有高稳健性和生物相容性的宽带隙半导体，使其成为生物医学设备钝化应用中一种很有前景的材料。几十年来，a-SiC薄膜沉积一直是研究的主题，人们研究了各种方法以实现多种应用的最佳性能，在过去十年中重点关注与生物医学设备相关的性能。本综述总结了许多优化研究的结果，确定了用于实现理想薄膜性能的策略，并讨论了提出的物理解释。此外，对比了研究中的不同结果，试图调和这些结果，同时突出了不确定性领域。
