Electron transport in bilayer graphene nano constrictions patterned using AFM nanolithography.

Here we report on low temperature transport measurements of encapsulated bilayer graphene nano constrictions fabricated employing AFM-based local anodic oxidation (LAO) nanolithography. This technique allows for the creation of constrictions as narrow as 20 nm much smaller than previous studies. In wider constrictions, we observe bulk transport characteristics. However, as the constriction's width is reduced, a transport gap appears. Single quantum dot (QD) formation is observed within the narrowest constriction with addition energies exceeding 100 meV, which surpass previous experiments on patterned QDs. Our results suggest that transport through these narrow constrictions is governed by edge disorder combined with quantum confinement effects. Our findings introduce AFM-LAO lithography as an easy and flexible method for creating nanostructures with tunable electronic properties without relying on patterning techniques such as e-beam lithography.