Yin Yuxiang, Liu Bingyan, Chen Yanru, Zhao Jianguo, Feng Jicheng
School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Shanghai 201210, China.
United Microelectronics Center, 20 Xiyuan Nan Jie, Chongqing 401332, China.
Nano Lett. 2025 May 21;25(20):8129-8135. doi: 10.1021/acs.nanolett.5c00563. Epub 2025 Apr 28.
As Moore's Law continues to push critical dimension (CD) scaling in integrated circuits, conventional photolithography approaches fundamental resolution limits. While alternative strategies such as self-aligned double patterning and directed self-assembly address these challenges, they introduce process complexity and manufacturing variability. Here we develop Faraday lithography (FL), a novel approach that hybridizes nanoscale 3D printing with conventional nanofabrication to overcome these limitations. FL achieves remarkable 35 nm features with atomic-scale precision (0.95 nm line edge roughness) and excellent local CD uniformity while maintaining process simplicity. The technique demonstrates unique capabilities for 2D/3D patterning across diverse substrates, whose conductivity or transparency has no influence. Unlike existing methods, FL accomplishes this without additional process steps or complex material requirements. This combination of high resolution, 3D capability, and material versatility positions FL as both a valuable complement to current patterning technologies and a potential catalyst for semiconductor nanomanufacturing innovation.
随着摩尔定律不断推动集成电路关键尺寸（CD）的缩小，传统光刻技术面临着基本分辨率极限。虽然诸如自对准双图案化和定向自组装等替代策略可应对这些挑战，但它们会带来工艺复杂性和制造变异性。在此，我们开发了法拉第光刻（FL）技术，这是一种将纳米级3D打印与传统纳米制造相结合的新颖方法，以克服这些限制。FL能够以原子级精度（线边缘粗糙度为0.95纳米）实现显著的35纳米特征，并具有出色的局部CD均匀性，同时保持工艺简单性。该技术展示了在各种不同衬底上进行二维/三维图案化的独特能力，这些衬底的导电性或透明度不会产生影响。与现有方法不同，FL无需额外的工艺步骤或复杂的材料要求即可实现这一点。高分辨率、三维能力和材料通用性的这种结合，使FL既成为当前图案化技术的宝贵补充，也成为半导体纳米制造创新的潜在催化剂。
