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镧合金化β-GaO纳米纤维中的相演变:实验与密度泛函理论模拟见解

Phase Evolution in La-Alloyed β-GaO Nanofibers: Experimental and DFT Simulation Insights.

作者信息

Cha Hyeongju, Jeon Dong Won, Ryou Heejoong, Kim Sunjae, Cho Sung Beom, Hwang Wan Sik

机构信息

Department of Materials Science and Engineering, Korea Aerospace University, Goyang 10540, Republic of Korea.

Department of Smart Air Mobility, Korea Aerospace University, Goyang 10540, Republic of Korea.

出版信息

ACS Omega. 2025 Apr 16;10(17):17476-17482. doi: 10.1021/acsomega.4c11050. eCollection 2025 May 6.

DOI:10.1021/acsomega.4c11050
PMID:40352572
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12059886/
Abstract

La-alloyed β-GaO nanofibers with varying La concentrations (0, 1, 5, and 10 at. %) are successfully synthesized using the electrospinning method to investigate the effects of incorporating La on phase formations. At La 1 at. % alloying, the polycrystalline β-GaO phase remains stable, indicating that this concentration is within its solubility limit. However, higher La alloying levels (5 and 10 at. %) lead to the formation of additional phases, including LaO, GaLa, LaGaO, cubic LaO, and orthorhombic LaGaO. Notably, when increasing the La concentration, the nonoxide metallic compound LaGa is observed, likely due to enhanced Ga-La interactions. Density functional theory (DFT) simulations confirm that LaGa has metallic properties, which could potentially improve the electrical performance of GaO-based devices. Furthermore, DFT simulations predict the formation, phase stability, and structure of La-based precipitates, offering valuable insights into the alloying behavior and material properties of GaO. These findings suggest possibilities for enhancing the functionality of GaO semiconductors in electronic applications.

摘要

采用静电纺丝法成功合成了具有不同镧浓度(0、1、5和10原子%)的镧合金化β-GaO纳米纤维,以研究掺入镧对相形成的影响。在1原子%的镧合金化时,多晶β-GaO相保持稳定,表明该浓度在其溶解度极限范围内。然而,更高的镧合金化水平(5和10原子%)会导致形成额外的相,包括LaO、GaLa、LaGaO、立方相LaO和正交相LaGaO。值得注意的是,当镧浓度增加时,会观察到非氧化物金属化合物LaGa,这可能是由于Ga-La相互作用增强所致。密度泛函理论(DFT)模拟证实LaGa具有金属特性,这可能会提高基于GaO的器件的电性能。此外,DFT模拟预测了镧基沉淀物的形成、相稳定性和结构,为GaO的合金化行为和材料性能提供了有价值的见解。这些发现为增强GaO半导体在电子应用中的功能提供了可能性。

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