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通过DMAPbI的X值采用狭缝式涂布法制备用于大面积光伏器件的无机钙钛矿薄膜

Engineering Inorganic Perovskite Films by X Values of DMAPbI toward Large Area Photovoltaic Devices by Slot-Die Coating.

作者信息

Qi Yifang, Zhang Qiqi, Aguinaga Jeffrey, Qiu Chuchu, Hang Rui, He Sheng, Upreti Saroj, Maurya Antim, Pradhan Nihar, Ray Paresh Chandra, Pomin Vitor, Gu Xiaodan, Patton Derek, Lian Tianquan, Dai Qilin

机构信息

Department of Chemistry, Physics, and Atmospheric Sciences, Jackson State University, Jackson, MS, 39217, USA.

School of Polymer Science and Engineering, Center for Optoelectronic Materials and Devices, The University of Southern Mississippi, Hattiesburg, MS, 39406, USA.

出版信息

Small. 2025 Aug;21(33):e2503825. doi: 10.1002/smll.202503825. Epub 2025 Jun 20.

DOI:10.1002/smll.202503825
PMID:40538267
Abstract

Dimethylammonium lead iodide (DMAPbI) has the potential to address the phase stability issue of inorganic perovskite solar cells (PSCs). In this study, the crystallinity, phase structure, defect states, and crystal growth habits of DMAPbI are controlled by adjusting the x value during synthesis, where N,N-dimethylacetamide (DMAC) is used as the solvent to regulate perovskite film growth. Furthermore, large-area CsPbIBr perovskite films with preferred oriented growth are achieved using the optimized x value in DMAPbI through the slot-die coating method. The inorganic PSCs, with a n-i-p structure and the active area of 0.04 cm, achieve a champion power conversion efficiency (PCE) of 19.82%, with an open-circuit voltage (V) of 1.16 V based on perovskite films formed by slot-die coating. This work provides important insights into the DMAPbI-based method for fabricating high-quality inorganic perovskite films, and paves the way for large-area inorganic PSCs fabrication for practical applications.

摘要

二甲基碘化铅(DMAPbI)有潜力解决无机钙钛矿太阳能电池(PSC)的相稳定性问题。在本研究中,通过在合成过程中调节x值来控制DMAPbI的结晶度、相结构、缺陷态和晶体生长习性,其中使用N,N - 二甲基乙酰胺(DMAC)作为溶剂来调节钙钛矿薄膜的生长。此外,通过狭缝式涂布法,利用DMAPbI中优化的x值获得了具有择优取向生长的大面积CsPbIBr钙钛矿薄膜。具有n - i - p结构且活性面积为0.04平方厘米的无机PSC,基于通过狭缝式涂布形成的钙钛矿薄膜,实现了19.82%的最佳功率转换效率(PCE),开路电压(V)为1.16 V。这项工作为基于DMAPbI制备高质量无机钙钛矿薄膜的方法提供了重要见解,并为大面积无机PSC的实际应用制备铺平了道路。

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