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Editorial for the Special Issue on GaN-Based Materials and Devices: Research and Applications.

作者信息

Liu Wei, Wang Kun

机构信息

School of Microelectronics, Northwestern Polytechnical University, Xi'an 710072, China.

出版信息

Micromachines (Basel). 2025 May 29;16(6):652. doi: 10.3390/mi16060652.

Abstract

Gallium nitride (GaN)-based materials and devices, as a core representative of third-generation semiconductors, have emerged as a strategic frontier driving modern electronics and optoelectronics revolutions [...].

摘要

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