Wang Hongbin, Zhou Cheng, Li Peng, Yang Lin, Ma Jiangang, Akaike Ryota, Miyake Hideto, Xu Haiyang, Liu Yichun
State Ley Laboratory of Integrated Optoelectronics, Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, School of Physics, Northeast Normal University, Changchun, China.
Graduate School of Engineering, Mie University, Tsu, Mie, Japan.
Nat Commun. 2025 Sep 1;16(1):8175. doi: 10.1038/s41467-025-63683-w.
Single-pixel imaging is emerging as a promising alternative to traditional focal plane array technologies, offering advantages in compactness and cost-effectiveness. However, the lack of solar-blind photodetectors combining fast-response and high-sensitivity has constrained their application in the deep ultraviolet spectrum. This work introduces a self-powered solar-blind photodetector based on a heterostructure comprising a GaO photosensitive layer, an AlN barrier layer, and an N-polar AlGaN:Si contact layer. The polarization field within the AlN layer induces band bending, creating potential wells that confine photogenerated holes and thereby generate photocurrent gain. Consequently, the GaO/AlN/AlGaN:Si solar-blind photodetector achieves a high responsivity of 0.73 A W and a rapid decay time of 56 µs. This performance enables 256 × 256 resolution solar-blind single-pixel imaging of both static fingerprints and moving objects. The proposed band offset engineering strategy opens a pathway for developing solar-blind photodetectors and solar-blind imaging technologies.
单像素成像正成为传统焦平面阵列技术的一种有前景的替代方案，在紧凑性和成本效益方面具有优势。然而，缺乏兼具快速响应和高灵敏度的日盲光电探测器限制了它们在深紫外光谱中的应用。这项工作介绍了一种基于异质结构的自供电日盲光电探测器，该异质结构包括GaO光敏层、AlN势垒层和N极性AlGaN:Si接触层。AlN层内的极化场引起能带弯曲，形成限制光生空穴的势阱，从而产生光电流增益。因此，GaO/AlN/AlGaN:Si日盲光电探测器实现了0.73 A/W的高响应度和56 μs的快速衰减时间。这种性能使得能够对静态指纹和移动物体进行256×256分辨率的日盲单像素成像。所提出的带隙工程策略为开发日盲光电探测器和日盲成像技术开辟了一条途径。
