Doi Xella, Nittala Pavani Vamsi Krishna, Fu Brian, Latt Kyaw Zin, Mishra Suryakant, Silverman Luke, Woodard Linus, Divan Ralu, Guha Supratik
Pritzker School of Molecular Engineering University of Chicago Chicago IL 60637 USA.
Materials Science Division Argonne National Laboratory Lemont IL 60439 USA.
Small Sci. 2023 Dec 22;4(2):2300121. doi: 10.1002/smsc.202300121. eCollection 2024 Feb.
Direct-write vapor deposition is a new technique that would enable one-step 3D maskless nanofabrication on a variety of substrates. A novel silicon chip-based microevaporator is developed that allows evaporant to exit through 2000-300 nm nozzles while held at distances comparable to the nozzle diameter from the substrate by a three-axis nanopositioning stage in vacuum. This results in a localized deposition on the substrate, which may be scanned relative to the substrate to produce direct-write patterns. The performance of the microevaporator is tested by creating localized depositions of various materials and the line-writing potential is demonstrated. The relationship between linewidth and source-to-substrate distance is investigated by the application of Knudsen's cosine law and Monte-Carlo simulations, and then utilized to approximate the source-to-substrate distance from performed depositions.
直写气相沉积是一种新技术，它能够在各种衬底上实现一步式3D无掩膜纳米制造。开发了一种新型的基于硅芯片的微蒸发器，该蒸发器允许蒸发剂通过2000 - 300纳米的喷嘴喷出，同时在真空中通过三轴纳米定位平台保持与衬底的距离与喷嘴直径相当。这导致在衬底上进行局部沉积，该沉积可以相对于衬底进行扫描以产生直写图案。通过创建各种材料的局部沉积来测试微蒸发器的性能，并展示了其线写入潜力。通过应用克努森余弦定律和蒙特卡罗模拟研究了线宽与源到衬底距离之间的关系，然后利用该关系从已完成的沉积中近似估算源到衬底的距离。
