非均匀窄带隙半导体中增强的室温几何磁阻

Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors.

作者信息

Solin SA, Thio T, Hines DR, Heremans JJ

机构信息

NEC Research Institute, 4 Independence Way, Princeton, NJ 08540, USA. Department of Physics and Astronomy, Ohio University, Athens, OH 45701, USA.

出版信息

Science. 2000 Sep 1;289(5484):1530-1532. doi: 10.1126/science.289.5484.1530.

DOI:10.1126/science.289.5484.1530

PMID:10968784

Abstract

A symmetric van der Pauw disk of homogeneous nonmagnetic indium antimonide with an embedded concentric gold inhomogeneity is found to exhibit room-temperature geometric magnetoresistance as high as 100, 9100, and 750,000 percent at magnetic fields of 0.05, 0.25, and 4.0 teslas, respectively. For inhomogeneities of sufficiently large diameter relative to that of the surrounding disk, the resistance is field-independent up to an onset field above which it increases rapidly. These results can be understood in terms of the field-dependent deflection of current around the inhomogeneity.

摘要

一个具有嵌入式同心金不均匀性的均匀非磁性锑化铟对称范德堡圆盘被发现，在0.05、0.25和4.0特斯拉的磁场下，分别表现出高达100%、9100%和750,000%的室温几何磁阻。对于相对于周围圆盘直径足够大的不均匀性，在起始场之前电阻与场无关，超过该起始场电阻会迅速增加。这些结果可以通过电流在不均匀性周围的场致偏转来理解。