Schofield S R, Curson N J, Simmons M Y, Ruess F J, Hallam T, Oberbeck L, Clark R G
Centre for Quantum Computer Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia.
Phys Rev Lett. 2003 Sep 26;91(13):136104. doi: 10.1103/PhysRevLett.91.136104. Epub 2003 Sep 25.
We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si(001) and show that it is possible to thermally incorporate P atoms into Si(001) below the H-desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H lithography. We demonstrate the positioning of single P atoms in Si with approximately 1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms.
我们展示了在Si(001)中可控地掺入P掺杂原子，为制造原子尺度的电子器件开辟了一条新途径。我们对PH3与Si(001)的相互作用进行了详细研究，结果表明在低于H脱附温度的条件下，有可能将P原子热掺入Si(001)中。通过扫描隧道显微镜（STM）氢光刻技术，实现了对P原子掺入的精确空间位置的控制。我们证明了能够以约1纳米的精度在Si中定位单个P原子，并制造出掺入P原子的纳米宽线条。
