Caetano-Anollés G, Bassam B J, Gresshoff P M
Institute of Agriculture, University of Tennesse, Knoxville 37901-1071.
Mol Gen Genet. 1992 Nov;235(2-3):157-65. doi: 10.1007/BF00279356.
DNA amplification fingerprinting (DAF) is the enzymatic amplification of arbitrary stretches of DNA which is directed by very short oligonucleotide primers of arbitrary sequence to generate complex but characteristic DNA fingerprints. To determine the contribution of primer sequence and length to the fingerprint pattern and the effect of primer-template mismatches, DNA was amplified from several sources using sequence-related primers. Primers of varying length, constructed by removing nucleotides from the 5' terminus, produced unique patterns only when primers were 8 nucleotides or fewer in length. Larger primers produced either identical or related fingerprints, depending on the sequence. Single base changes within this first 8-nucleotide region of the primer significantly altered the spectrum of amplification products, especially at the 3' terminus. Increasing annealing temperatures from 15 degrees to 70 degrees C during amplification did not shift the boundary of the 8-nucleotide region, but reduced the amplification ability of shorter primers. Our observations define a 3'-terminal oligonucleotide domain that is at least 8 bases in length and largely conditions amplification, but that is modulated by sequences beyond it. Our results indicate that only a fraction of template annealing sites are efficiently amplified during DAF. A model is proposed in which a single primer preferentially amplifies certain products due to competition for annealing sites between primer and terminal hairpin loop structures of the template.
DNA扩增指纹分析(DAF)是指由任意序列的非常短的寡核苷酸引物引导的对任意DNA片段进行酶促扩增,以产生复杂但具有特征性的DNA指纹。为了确定引物序列和长度对指纹图谱的贡献以及引物-模板错配的影响,使用与序列相关的引物从多个来源扩增DNA。通过从5'末端去除核苷酸构建的不同长度的引物,只有在长度为8个核苷酸或更少时才产生独特的图谱。更大的引物产生相同或相关的指纹,这取决于序列。引物的前8个核苷酸区域内的单个碱基变化会显著改变扩增产物的谱,尤其是在3'末端。在扩增过程中将退火温度从15℃提高到70℃不会改变8个核苷酸区域的边界,但会降低较短引物的扩增能力。我们的观察结果定义了一个至少8个碱基长的3'末端寡核苷酸结构域,该结构域在很大程度上决定了扩增,但会受到其以外序列的调节。我们的结果表明,在DAF过程中只有一小部分模板退火位点被有效扩增。提出了一个模型,其中单个引物由于引物与模板的末端发夹环结构之间对退火位点的竞争而优先扩增某些产物。