Gerton Jordan M, Wade Lawrence A, Lessard Guillaume A, Ma Z, Quake Stephen R
Department of Applied Physics, California Institute of Technology, MC 128-95, Pasadena, CA 91125, USA.
Phys Rev Lett. 2004 Oct 29;93(18):180801. doi: 10.1103/PhysRevLett.93.180801. Epub 2004 Oct 28.
We demonstrate unambiguously that the field enhancement near the apex of a laser-illuminated silicon tip decays according to a power law that is moderated by a single parameter characterizing the tip sharpness. Oscillating the probe in intermittent contact with a semiconductor nanocrystal strongly modulates the fluorescence excitation rate, providing robust optical contrast and enabling excellent background rejection. Laterally encoded demodulation yields images with <10 nm spatial resolution, consistent with independent measurements of tip sharpness.
我们明确证明，激光照射的硅尖顶端附近的场增强遵循幂律衰减，该幂律由表征尖端锐度的单个参数调节。使探针与半导体纳米晶体间歇性接触振荡，可强烈调制荧光激发速率，提供强大的光学对比度并实现出色的背景抑制。横向编码解调产生空间分辨率小于10纳米的图像，这与对尖端锐度的独立测量结果一致。
