Dhoot A S, Wang G M, Moses D, Heeger A J
Center for Polymers and Organic Solids and Mitsubishi Chemical Center for Advanced Materials, University of California, Santa Barbara, California 93106, USA.
Phys Rev Lett. 2006 Jun 23;96(24):246403. doi: 10.1103/PhysRevLett.96.246403. Epub 2006 Jun 20.
We have extensively studied the carrier transport in regio-regular polythiophene field-effect transistors (FETs) from room temperature to 4.2 K. At low temperatures, Zabrodskii plots (dlnsigma/dlnT) demonstrate that the gate voltage and source-drain voltage combine to induce the insulator-to-metal transition at a carrier density of 5x10(12) cm-2. The carrier transport in the insulating regime is well described by phonon assisted hopping in a disordered Fermi glass with Coulomb interaction between the hopping charge carrier and the opposite charge left behind, as described by Efros and Shklovskii.
我们广泛研究了区域规整聚噻吩场效应晶体管（FET）从室温到4.2 K的载流子输运。在低温下，扎布罗德斯基图（dlnsigma/dlnT）表明，栅极电压和源漏电压共同作用，在载流子密度为5×10¹² cm⁻²时诱导绝缘体到金属的转变。如埃弗罗斯和什克洛夫斯基所述，绝缘态下的载流子输运可以很好地用无序费米玻璃中的声子辅助跳跃来描述，其中跳跃电荷载流子与留下的相反电荷之间存在库仑相互作用。
