Purewal Meninder S, Hong Byung Hee, Ravi Anirudhh, Chandra Bhupesh, Hone James, Kim Philip
Department of Applied Physics and Applied Math, Columbia University, New York, New York 10027, USA.
Phys Rev Lett. 2007 May 4;98(18):186808. doi: 10.1103/PhysRevLett.98.186808.
We present an experimental investigation on the scaling of resistance in individual single-walled carbon nanotube devices with channel lengths that vary 4 orders of magnitude on the same sample. The electron mean free path is obtained from the linear scaling of resistance with length at various temperatures. The low temperature mean free path is determined by impurity scattering, while at high temperature, the mean free path decreases with increasing temperature, indicating that it is limited by electron-phonon scattering. An unusually long mean free path at room temperature has been experimentally confirmed. Exponentially increasing resistance with length at extremely long length scales suggests anomalous localization effects.
我们展示了一项关于单个单壁碳纳米管器件中电阻缩放的实验研究，该器件在同一样品上的沟道长度变化了4个数量级。电子平均自由程是通过在不同温度下电阻随长度的线性缩放得到的。低温下的平均自由程由杂质散射决定，而在高温下，平均自由程随温度升高而减小，这表明它受电子 - 声子散射限制。室温下异常长的平均自由程已通过实验得到证实。在极长长度尺度下电阻随长度呈指数增加表明存在反常局域化效应。
