Forti Stiven, Link Stefan, Stöhr Alexander, Niu Yuran, Zakharov Alexei A, Coletti Camilla, Starke Ulrich
Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127, Pisa, Italy.
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569, Stuttgart, Germany.
Nat Commun. 2020 May 6;11(1):2236. doi: 10.1038/s41467-020-15683-1.
The synthesis of two-dimensional (2D) transition metals has attracted growing attention for both fundamental and application-oriented investigations, such as 2D magnetism, nanoplasmonics and non-linear optics. However, the large-area synthesis of this class of materials in a single-layer form poses non-trivial difficulties. Here we present the synthesis of a large-area 2D gold layer, stabilized in between silicon carbide and monolayer graphene. We show that the 2D-Au ML is a semiconductor with the valence band maximum 50 meV below the Fermi level. The graphene and gold layers are largely non-interacting, thereby defining a class of van der Waals heterostructure. The 2D-Au bands, exhibit a 225 meV spin-orbit splitting along the [Formula: see text] direction, making it appealing for spin-related applications. By tuning the amount of gold at the SiC/graphene interface, we induce a semiconductor to metal transition in the 2D-Au, which has not yet been observed and hosts great interest for fundamental physics.
二维(2D)过渡金属的合成在基础研究和面向应用的研究中都引起了越来越多的关注,例如二维磁性、纳米等离子体学和非线性光学。然而,以单层形式大面积合成这类材料存在不小的困难。在此,我们展示了一种大面积二维金层的合成,该金层稳定于碳化硅和单层石墨烯之间。我们表明二维金单层是一种半导体,其价带最大值位于费米能级以下50毫电子伏特。石墨烯层和金层在很大程度上不相互作用,从而定义了一类范德华异质结构。二维金能带在沿[公式:见原文]方向表现出225毫电子伏特的自旋轨道分裂,这使其在自旋相关应用方面具有吸引力。通过调整碳化硅/石墨烯界面处金的含量,我们在二维金中诱导出半导体到金属的转变,这尚未被观察到,并且在基础物理学中引起了极大的兴趣。