Zannier Valentina, Li Ang, Rossi Francesca, Yadav Sachin, Petersson Karl, Sorba Lucia
NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy.
Beijing Key Laboratory of Microstructure and Properties of Solids, Beijing University of Technology, Beijing 100124, China.
Materials (Basel). 2022 Mar 30;15(7):2543. doi: 10.3390/ma15072543.
In order to use III-V compound semiconductors as active channel materials in advanced electronic and quantum devices, it is important to achieve a good epitaxial growth on silicon substrates. As a first step toward this, we report on the selective-area growth of GaP/InGaP/InP/InAsP buffer layer nanotemplates on GaP substrates which are closely lattice-matched to silicon, suitable for the integration of in-plane InAs nanowires. Scanning electron microscopy reveals a perfect surface selectivity and uniform layer growth inside 150 and 200 nm large SiO mask openings. Compositional and structural characterization of the optimized structure performed by transmission electron microscopy shows the evolution of the major facet planes and allows a strain distribution analysis. Chemically uniform layers with well-defined heterointerfaces are obtained, and the topmost InAs layer is free from any dislocation. Our study demonstrates that a growth sequence of thin layers with progressively increasing lattice parameters is effective to efficiently relax the strain and eventually obtain high quality in-plane InAs nanowires on large lattice-mismatched substrates.
为了在先进的电子和量子器件中使用III-V族化合物半导体作为有源沟道材料，在硅衬底上实现良好的外延生长非常重要。作为迈向这一目标的第一步，我们报道了在与硅晶格紧密匹配的GaP衬底上选择性区域生长GaP/InGaP/InP/InAsP缓冲层纳米模板，该模板适用于面内InAs纳米线的集成。扫描电子显微镜显示出在150和200 nm大的SiO掩膜开口内具有完美的表面选择性和均匀的层生长。通过透射电子显微镜对优化结构进行的成分和结构表征显示了主要晶面的演变，并允许进行应变分布分析。获得了具有明确异质界面的化学均匀层，并且最顶层的InAs层没有任何位错。我们的研究表明，具有逐渐增加晶格参数的薄层生长序列对于有效弛豫应变并最终在大晶格失配衬底上获得高质量的面内InAs纳米线是有效的。
