Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Nano Lett. 2010 Feb 10;10(2):398-405. doi: 10.1021/nl902741x.
The reactivity of graphene and its various multilayers toward electron transfer chemistries with 4-nitrobenzene diazonium tetrafluoroborate is probed by Raman spectroscopy after reaction on-chip. Single graphene sheets are found to be almost 10 times more reactive than bi- or multilayers of graphene according to the relative disorder (D) peak in the Raman spectrum examined before and after chemical reaction in water. A model whereby electron puddles that shift the Dirac point locally to values below the Fermi level is consistent with the reactivity difference. Because the chemistry at the graphene edge is important for controlling its electronic properties, particularly in ribbon form, we have developed a spectroscopic test to examine the relative reactivity of graphene edges versus the bulk. We show, for the first time, that the reactivity of edges is at least two times higher than the reactivity of the bulk single graphene sheet, as supported by electron transfer theory. These differences in electron transfer rates may be important for selecting and manipulating graphitic materials on-chip.
拉曼光谱研究表明,经芯片上反应后,石墨烯及其各种多层结构对 4-硝基苯重氮四氟硼酸盐的电子转移化学表现出反应活性。根据反应前后水中拉曼光谱中相对无序(D)峰的变化,发现单石墨烯片的反应活性比双层或多层石墨烯高近 10 倍。一个模型表明,电子水坑会将狄拉克点局部转移到费米能级以下的值,这与反应活性的差异一致。由于石墨烯边缘的化学性质对于控制其电子性质很重要,特别是在带状形式下,我们已经开发了一种光谱测试来检查石墨烯边缘与体相的相对反应活性。我们首次表明,边缘的反应活性至少是体相单层石墨烯的两倍,这得到了电子转移理论的支持。这些电子转移速率的差异对于在芯片上选择和操纵石墨材料可能很重要。