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基于部分掩埋水平槽型波导的高性能纳米光子电路。

High performance nanophotonic circuits based on partially buried horizontal slot waveguides.

作者信息

Xiong Chi, Pernice Wolfram H P, Li Mo, Tang Hong X

机构信息

Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA.

出版信息

Opt Express. 2010 Sep 27;18(20):20690-8. doi: 10.1364/OE.18.020690.

Abstract

We present a novel platform to construct high-performance nanophotonic devices in low refractive index dielectric films at telecoms wavelengths. The formation of horizontal slots by PECVD deposition of high index amorphous silicon provides a convenient and low-cost way to tailor nanophotonic devices to application needs. Low propagation loss of less than 2 dB/cm is obtained allowing us to fabricate optical resonators with measured high optical quality factors exceeding 10(5). We design and experimentally demonstrate on-chip grating couplers to efficiently couple light into integrated circuitry with coupling loss of 4 dB and optical bandwidth exceeding 110 nm. The entire on-chip circuitry consisting of input/output couplers, Mach-Zehnder interferometers with high extinction ratio and ring, racetrack resonators are designed, fabricated and characterized.

摘要

我们展示了一种新颖的平台,用于在电信波长的低折射率介电薄膜中构建高性能纳米光子器件。通过PECVD沉积高折射率非晶硅形成水平狭缝,为根据应用需求定制纳米光子器件提供了一种便捷且低成本的方法。实现了低于2 dB/cm的低传播损耗,这使我们能够制造出测量的光学品质因数超过10(5)的高光谐振器。我们设计并通过实验证明了片上光栅耦合器,能够以4 dB的耦合损耗和超过110 nm的光学带宽将光有效地耦合到集成电路中。设计、制造并表征了由输入/输出耦合器、具有高消光比的马赫-曾德尔干涉仪以及环形、跑道形谐振器组成的整个片上电路。

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