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半导体纳米膜管:用于控制神经突生长的三维限制。

Semiconductor nanomembrane tubes: three-dimensional confinement for controlled neurite outgrowth.

机构信息

Department of Electrical and Computer Engineering, University of Wisconsin - Madison, Madison, Wisconsin 53706, USA.

出版信息

ACS Nano. 2011 Apr 26;5(4):2447-57. doi: 10.1021/nn103618d. Epub 2011 Mar 9.

Abstract

In many neural culture studies, neurite migration on a flat, open surface does not reflect the three-dimensional (3D) microenvironment in vivo. With that in mind, we fabricated arrays of semiconductor tubes using strained silicon (Si) and germanium (Ge) nanomembranes and employed them as a cell culture substrate for primary cortical neurons. Our experiments show that the SiGe substrate and the tube fabrication process are biologically viable for neuron cells. We also observe that neurons are attracted by the tube topography, even in the absence of adhesion factors, and can be guided to pass through the tubes during outgrowth. Coupled with selective seeding of individual neurons close to the tube opening, growth within a tube can be limited to a single axon. Furthermore, the tube feature resembles the natural myelin, both physically and electrically, and it is possible to control the tube diameter to be close to that of an axon, providing a confined 3D contact with the axon membrane and potentially insulating it from the extracellular solution.

摘要

在许多神经培养研究中,神经突起在平坦的开放表面上的迁移并不能反映体内的三维(3D)微环境。考虑到这一点,我们使用应变硅(Si)和锗(Ge)纳米薄膜制造了半导体管阵列,并将其用作原代皮质神经元的细胞培养基板。我们的实验表明,SiGe 基板和管制造工艺对神经元细胞具有生物可行性。我们还观察到,即使没有粘附因子,神经元也会被管的形貌吸引,并能在突起过程中被引导穿过管。通过在靠近管开口处选择性地接种单个神经元,管内的生长可以限制为单个轴突。此外,管的特征在物理和电学上与天然髓鞘相似,可以控制管的直径接近轴突的直径,从而与轴突膜形成紧密的 3D 接触,并可能将其与细胞外溶液隔离开来。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dd92/3664647/1398c3fdda4f/nihms279521f1.jpg

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