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基于多晶硅锗的微测辐射热计阵列的制造

Fabrication of Microbolometer Arrays Based on Polymorphous Silicon-Germanium.

作者信息

Jimenez Ricardo, Moreno Mario, Torres Alfonso, Morales Alfredo, Ponce Arturo, Ferrusca Daniel, Rangel-Magdaleno Jose, Castro-Ramos Jorge, Hernandez-Perez Julio, Cano Eduardo

机构信息

Electronics Group, National Institute of Astrophysics, Optics and Electronics, Puebla 72840, Mexico.

Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX 78249, USA.

出版信息

Sensors (Basel). 2020 May 9;20(9):2716. doi: 10.3390/s20092716.

DOI:10.3390/s20092716
PMID:32397557
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7273222/
Abstract

This work reports the development of arrays of infrared sensors (microbolometers) using a hydrogenated polymorphous silicon-germanium alloy (pm-SiGe:H). Basically, polymorphous semiconductors consist of an amorphous semiconductor matrix with embedded nanocrystals of about 2-3 nm. The pm-SiGe:H alloy studied has a high temperature coefficient of resistance (TCR) of 4.08%/K and conductivity of 1.5 × 10 S∙cm. Deposition of thermosensing film was made by plasma-enhanced chemical vapor deposition (PECVD) at 200 °C, while the area of the devices is 50 × 50 μm with a fill factor of 81%. Finally, an array of 19 × 20 microbolometers was packaged for electrical characterization. Voltage responsivity values were obtained in the range of 4 × 10 V/W and detectivity around 2 × 10 cm∙Hz/W with a polarization current of 70 μA at a chopper frequency of 30 Hz. A minimum value of 2 × 10 W/Hz noise equivalent power was obtained at room temperature. In addition, it was found that all the tested devices responded to incident infrared radiation, proving that the structure and mechanical stability are excellent.

摘要

这项工作报道了使用氢化多晶硅锗合金（pm-SiGe:H）开发红外传感器（微测辐射热计）阵列的情况。基本上，多晶半导体由具有约2 - 3纳米嵌入纳米晶体的非晶半导体基质组成。所研究的pm-SiGe:H合金具有4.08%/K的高电阻温度系数（TCR）和1.5×10 S∙cm的电导率。热敏薄膜通过等离子体增强化学气相沉积（PECVD）在200°C下沉积，器件面积为50×50μm，填充因子为81%。最后，将一个19×20的微测辐射热计阵列进行封装以进行电学特性表征。在30 Hz的斩波频率下，极化电流为70μA时，获得的电压响应率值在4×10 V/W范围内，探测率约为2×10 cm∙Hz/W。在室温下获得的噪声等效功率最小值为2×10 W/Hz。此外，发现所有测试器件都对入射红外辐射有响应，证明其结构和机械稳定性极佳。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/4f4966f0df4d/sensors-20-02716-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/f45951be80b1/sensors-20-02716-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/5710959645d9/sensors-20-02716-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/3fabc13cf1ce/sensors-20-02716-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/4e704232ad20/sensors-20-02716-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/70b35add6593/sensors-20-02716-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/613cc844cf8f/sensors-20-02716-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/4f4966f0df4d/sensors-20-02716-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/f45951be80b1/sensors-20-02716-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/5710959645d9/sensors-20-02716-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/3fabc13cf1ce/sensors-20-02716-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/4e704232ad20/sensors-20-02716-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/70b35add6593/sensors-20-02716-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/613cc844cf8f/sensors-20-02716-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e180/7273222/4f4966f0df4d/sensors-20-02716-g007.jpg

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