Nezhad Maziar P, Bondarenko Olesya, Khajavikhan Mercedeh, Simic Aleksandar, Fainman Yeshaiahu
ECE Department, University of California San Diego, 9500 Gilman Drive, MC 0440, La Jolla, California 92093-0440, USA.
Opt Express. 2011 Sep 26;19(20):18827-32. doi: 10.1364/OE.19.018827.
An etch-free fabrication technique for creating low loss silicon waveguides in the silicon-on-insulator material system is proposed and demonstrated. The approach consists of local oxidation of a silicon-on-insulator chip covered with a e-beam patterned hydrogen silsesquioxane mask. A single oxidation step converts hydrogen silsesquioxane to a glass-like compound and simultaneously defines the waveguides, bypassing the need for any wet or dry etching steps. The spectral response of ring resonators fabricated using this technique was used to characterize the waveguide losses. Intrinsic Q-factors as high as 1.57 × 10(6), corresponding to a waveguide loss of 0.35 dB/cm, were measured.
提出并演示了一种用于在绝缘体上硅材料系统中制造低损耗硅波导的无蚀刻制造技术。该方法包括对覆盖有电子束图案化氢倍半硅氧烷掩膜的绝缘体上硅芯片进行局部氧化。单个氧化步骤将氢倍半硅氧烷转化为类似玻璃的化合物，同时定义波导，无需任何湿法或干法蚀刻步骤。使用该技术制造的环形谐振器的光谱响应用于表征波导损耗。测量到高达1.57×10(6)的本征品质因数，对应于0.35 dB/cm的波导损耗。
