IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.
Nano Lett. 2012 Feb 8;12(2):758-62. doi: 10.1021/nl203701g. Epub 2012 Jan 18.
Although carbon nanotube (CNT) transistors have been promoted for years as a replacement for silicon technology, there is limited theoretical work and no experimental reports on how nanotubes will perform at sub-10 nm channel lengths. In this manuscript, we demonstrate the first sub-10 nm CNT transistor, which is shown to outperform the best competing silicon devices with more than four times the diameter-normalized current density (2.41 mA/μm) at a low operating voltage of 0.5 V. The nanotube transistor exhibits an impressively small inverse subthreshold slope of 94 mV/decade-nearly half of the value expected from a previous theoretical study. Numerical simulations show the critical role of the metal-CNT contacts in determining the performance of sub-10 nm channel length transistors, signifying the need for more accurate theoretical modeling of transport between the metal and nanotube. The superior low-voltage performance of the sub-10 nm CNT transistor proves the viability of nanotubes for consideration in future aggressively scaled transistor technologies.
尽管碳纳米管（CNT）晶体管多年来一直被宣传为硅技术的替代品，但关于纳米管在亚 10nm 沟道长度下的性能表现，理论研究有限，实验报告也很少。在本文中，我们展示了第一个亚 10nm 的 CNT 晶体管，其在低工作电压 0.5V 下的电流密度比最好的竞争硅器件高出四倍以上（2.41mA/μm），表现出卓越的性能。该纳米管晶体管具有令人印象深刻的小反向亚阈值斜率为 94mV/decade-接近之前理论研究预期值的一半。数值模拟表明，金属-CNT 接触在确定亚 10nm 沟道长度晶体管的性能方面起着关键作用，这表明需要对金属和纳米管之间的传输进行更准确的理论建模。亚 10nm CNT 晶体管的优异低压性能证明了纳米管在未来积极扩展的晶体管技术中的可行性。
