IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA.
Nat Nanotechnol. 2010 Dec;5(12):858-62. doi: 10.1038/nnano.2010.220. Epub 2010 Nov 21.
Carbon nanotube field-effect transistors are strong candidates in replacing or supplementing silicon technology. Although theoretical studies have projected that nanotube transistors will perform well at nanoscale device dimensions, most experimental studies have been carried out on devices that are about ten times larger than current silicon transistors. Here, we show that nanotube transistors maintain their performance as their channel length is scaled from 3 µm to 15 nm, with an absence of so-called short-channel effects. The 15-nm device has the shortest channel length and highest room-temperature conductance (0.7G₀) and transconductance (40 µS) of any nanotube transistor reported to date. We also show the first experimental evidence that nanotube device performance depends significantly on contact length, in contrast to some previous reports. Data for both channel and contact length scaling were gathered by constructing multiple devices on a single carbon nanotube. Finally, we demonstrate the performance of a nanotube transistor with channel and contact lengths of 20 nm, an on-current of 10 µA, an on/off current ratio of 1 x 10⁵, and peak transconductance of 20 µS. These results provide an experimental forecast for carbon nanotube device performance at dimensions suitable for future transistor technology nodes.
碳纳米管场效应晶体管是替代或补充硅技术的有力候选者。虽然理论研究预测纳米管晶体管在纳米尺度器件尺寸上的性能良好，但大多数实验研究都是在比当前硅晶体管大约大十倍的器件上进行的。在这里，我们表明，随着沟道长度从 3 µm 缩小到 15 nm，纳米管晶体管保持其性能，而没有所谓的短沟道效应。15nm 器件具有迄今为止报道的最短沟道长度和最高室温电导率（0.7G₀）和跨导（40 µS）。我们还首次展示了实验证据，表明与一些先前的报告相反，纳米管器件的性能取决于接触长度。通过在单个碳纳米管上构建多个器件，收集了沟道和接触长度缩放的数据。最后，我们展示了一个沟道和接触长度为 20nm、导通电流为 10µA、导通/关断电流比为 1 x 10⁵和峰值跨导为 20µS 的纳米管晶体管的性能。这些结果为未来晶体管技术节点的碳纳米管器件性能提供了实验预测。
