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S4-S5 连接环的有限的 4Å 径向位移足以引起 KV 通道的内门关闭。

A limited 4 Å radial displacement of the S4-S5 linker is sufficient for internal gate closing in Kv channels.

机构信息

Groupe d'Étude des Protéines Membranaires (GÉPROM), Université de Montréal, Montréal, Quebec H3C 3J7, Canada.

出版信息

J Biol Chem. 2012 Nov 16;287(47):40091-8. doi: 10.1074/jbc.M112.415497. Epub 2012 Sep 27.

Abstract

Voltage-gated ion channels are responsible for the generation of action potentials in our nervous system. Conformational rearrangements in their voltage sensor domains in response to changes of the membrane potential control pore opening and thus ion conduction. Crystal structures of the open channel in combination with a wealth of biophysical data and molecular dynamics simulations led to a consensus on the voltage sensor movement. However, the coupling between voltage sensor movement and pore opening, the electromechanical coupling, occurs at the cytosolic face of the channel, from where no structural information is available yet. In particular, the question how far the cytosolic pore gate has to close to prevent ion conduction remains controversial. In cells, spectroscopic methods are hindered because labeling of internal sites remains difficult, whereas liposomes or detergent solutions containing purified ion channels lack voltage control. Here, to overcome these problems, we controlled the state of the channel by varying the lipid environment. This way, we directly measured the position of the S4-S5 linker in both the open and the closed state of a prokaryotic Kv channel (KvAP) in a lipid environment using Lanthanide-based resonance energy transfer. We were able to reconstruct the movement of the covalent link between the voltage sensor and the pore domain and used this information as restraints for molecular dynamics simulations of the closed state structure. We found that a small decrease of the pore radius of about 3-4 Å is sufficient to prevent ion permeation through the pore.

摘要

电压门控离子通道负责我们神经系统中动作电位的产生。其电压传感器域构象的重排响应于膜电位的变化控制孔的打开,从而控制离子传导。开放通道的晶体结构结合大量生物物理数据和分子动力学模拟,导致对电压传感器运动的共识。然而,电压传感器运动和孔打开之间的耦合,即机电耦合,发生在通道的胞质侧,目前还没有来自该侧的结构信息。特别是,胞质孔门关闭到什么程度以防止离子传导的问题仍然存在争议。在细胞中,由于内部位点的标记仍然很困难,因此光谱方法受到阻碍,而含有纯化离子通道的脂质体或去污剂溶液缺乏电压控制。在这里,为了克服这些问题,我们通过改变脂质环境来控制通道的状态。通过这种方式,我们使用镧系元素共振能量转移直接测量了在脂质环境中一个原核 Kv 通道(KvAP)的开放和关闭状态下 S4-S5 接头的位置。我们能够重建电压传感器和孔域之间的共价键的运动,并将此信息用作封闭状态结构分子动力学模拟的约束条件。我们发现,孔半径的微小减小约 3-4 Å 足以防止离子通过孔渗透。

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