Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States.
Nano Lett. 2013 Aug 14;13(8):3864-9. doi: 10.1021/nl401934a. Epub 2013 Aug 2.
Fully printed transistors are a key component of ubiquitous flexible electronics. In this work, the advantages of an inverse gravure printing technique and the solution processing of semiconductor-enriched single-walled carbon nanotubes (SWNTs) are combined to fabricate fully printed thin-film transistors on mechanically flexible substrates. The fully printed transistors are configured in a top-gate device geometry and utilize silver metal electrodes and an inorganic/organic high-κ (~17) gate dielectric. The devices exhibit excellent performance for a fully printed process, with mobility and on/off current ratio of up to ~9 cm(2)/(V s) and 10(5), respectively. Extreme bendability is observed, without measurable change in the electrical performance down to a small radius of curvature of 1 mm. Given the high performance of the transistors, our high-throughput printing process serves as an enabling nanomanufacturing scheme for a wide range of large-area electronic applications based on carbon nanotube networks.
全印刷晶体管是无处不在的柔性电子产品的关键组成部分。在这项工作中，反凹版印刷技术的优势和富半导体单壁碳纳米管（SWNTs）的溶液处理相结合，在机械柔性衬底上制造全印刷薄膜晶体管。全印刷晶体管采用顶栅器件结构，使用银金属电极和无机/有机高介电常数（17）栅介质。该器件具有出色的全印刷工艺性能，迁移率和开关电流比高达9 cm2/（V s）和 105，分别。观察到极优的可弯曲性，在小曲率半径低至 1mm 时，电性能没有可测量的变化。鉴于晶体管的高性能，我们的高通量印刷工艺为基于碳纳米管网络的各种大面积电子应用提供了一种可行的纳米制造方案。
