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电子束诱导沉积中电子刺激解吸的作用。

The role of electron-stimulated desorption in focused electron beam induced deposition.

机构信息

Materials Science, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, Netherlands.

出版信息

Beilstein J Nanotechnol. 2013 Aug 14;4:474-80. doi: 10.3762/bjnano.4.56. eCollection 2013.

DOI:10.3762/bjnano.4.56
PMID:24062973
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3778412/
Abstract

We present the results of our study about the deposition rate of focused electron beam induced processing (FEBIP) as a function of the substrate temperature with the substrate being an electron-transparent amorphous carbon membrane. When W(CO)6 is used as a precursor it is observed that the growth rate is lower at higher substrate temperatures. From Arrhenius plots we calculated the activation energy for desorption, E des, of W(CO)6. We found an average value for E des of 20.3 kJ or 0.21 eV, which is 2.5-3.0 times lower than literature values. This difference between estimates for E des from FEBIP experiments compared to literature values is consistent with earlier findings by other authors. The discrepancy is attributed to electron-stimulated desorption, which is known to occur during electron irradiation. The data suggest that, of the W(CO)6 molecules that are affected by the electron irradiation, the majority desorbs from the surface rather than dissociates to contribute to the deposit. It is important to take this into account during FEBIP experiments, for instance when determining fundamental process parameters such as the activation energy for desorption.

摘要

我们展示了聚焦电子束诱导处理(FEBIP)沉积速率作为基底温度函数的研究结果,基底为电子透明非晶碳膜。当使用 W(CO)6 作为前体时,我们观察到在较高的基底温度下生长速率较低。从 Arrhenius 图中,我们计算了 W(CO)6 的脱附活化能 E des。我们发现 E des 的平均值为 20.3 kJ 或 0.21 eV,比文献值低 2.5-3.0 倍。与文献值相比,FEBIP 实验中 E des 的估计值之间的这种差异与其他作者的早期发现一致。这种差异归因于电子刺激脱附,这是已知在电子辐照期间发生的。数据表明,在受电子辐照影响的 W(CO)6 分子中,大多数从表面脱附,而不是离解以贡献于沉积物。在 FEBIP 实验中,考虑到这一点很重要,例如在确定脱附活化能等基本过程参数时。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee0a/3778412/0b17738d279a/Beilstein_J_Nanotechnol-04-474-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee0a/3778412/b2c03a4fce9d/Beilstein_J_Nanotechnol-04-474-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee0a/3778412/e3342c83b08b/Beilstein_J_Nanotechnol-04-474-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee0a/3778412/ad84a35fed2f/Beilstein_J_Nanotechnol-04-474-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee0a/3778412/0b17738d279a/Beilstein_J_Nanotechnol-04-474-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee0a/3778412/b2c03a4fce9d/Beilstein_J_Nanotechnol-04-474-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee0a/3778412/e3342c83b08b/Beilstein_J_Nanotechnol-04-474-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee0a/3778412/ad84a35fed2f/Beilstein_J_Nanotechnol-04-474-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ee0a/3778412/0b17738d279a/Beilstein_J_Nanotechnol-04-474-g005.jpg

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