范德瓦尔斯外延双异质结：InAs/单层石墨烯/InAs。

Van der Waals epitaxial double heterostructure: InAs/single-layer graphene/InAs.

机构信息

Department of Nanotechnology and Advanced Materials Engineering Graphene Research Institute and Hybrid Materials Research Center, Sejong University, Seoul, 143-747, Korea; Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo, 060-8628, Japan.

出版信息

Adv Mater. 2013 Dec 17;25(47):6847-53. doi: 10.1002/adma.201302312. Epub 2013 Sep 25.

DOI:10.1002/adma.201302312

PMID:24115285

Abstract

Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.

摘要

范德华（vdW）外延双异质结构是通过在石墨烯两侧的vdW 外延生长 InAs 纳米结构来制备的。InAs 纳米结构沿 As 极性方向在/下石墨烯上精确形成，表明双异质结构的极性反转。第一性原理和密度泛函计算表明了 InAs 如何以及为什么容易形成具有极性反转的双异质结构。