Yang Yang, Lü Weiming, Yao Yuan, Sun Jirong, Gu Changzhi, Gu Lin, Wang Yanguo, Duan Xiaofeng, Yu Richeng
Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
Sci Rep. 2014 Jan 27;4:3890. doi: 10.1038/srep03890.
After decades of efforts, the research on resistance switching (RS) behavior in transition metal oxides has shifted to the stage of verifying the proposed models by direct experimental evidences. In this paper, RS behavior and oxygen content variation of La0.85Sr0.15TiO3/SrTiO3:Nb (LSTO/STON) were investigated by in situ transmission electron microscopy observation and in situ electron energy loss spectrum characterization under external electric field. The oxygen content fluctuation adjusted by applied bias has been investigated and the observed results imply the conductive channels should be formed by the oxygen vacancy at the Pt/LSTO interface. Moreover, in situ TEM characterization displays the advantage - to reveal the origin of various RS behaviors.
经过数十年的努力，过渡金属氧化物中电阻开关（RS）行为的研究已进入通过直接实验证据验证所提出模型的阶段。本文通过原位透射电子显微镜观察和外部电场下的原位电子能量损失谱表征，研究了La0.85Sr0.15TiO3/SrTiO3:Nb（LSTO/STON）的RS行为和氧含量变化。研究了施加偏压调节的氧含量波动，观察结果表明导电通道应由Pt/LSTO界面处的氧空位形成。此外，原位TEM表征显示了其优势——揭示各种RS行为的起源。
