Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan.
Nanoscale Res Lett. 2014 Jan 29;9(1):52. doi: 10.1186/1556-276X-9-52.
We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the resistive switch mechanism of high/low resistance states (HRS/LRS) in carbon RRAM. The electrical conduction mechanism of LRS is attributed to conductive sp2 carbon filament with conjugation double bonds by dehydrogenation, while the electrical conduction of HRS resulted from the formation of insulating sp3-type carbon filament through hydrogenation process.
我们研究了具有非晶碳层的电阻式随机存取存储器 (RRAM) 器件的双极性电阻开关特性。施加形成电压后，非晶碳层碳化形成共轭双键导电丝。我们提出了一个氢氧化还原模型，以阐明碳阻变存储器中高低阻态 (HRS/LRS) 的电阻开关机制。LRS 的电传导机制归因于通过脱氢形成具有共轭双键的 sp2 碳丝，而 HRS 的电传导则是通过氢化过程形成绝缘的 sp3 型碳丝。
